MW7IC2020NT1 Discrete Semiconductor Products |
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Allicdata Part #: | MW7IC2020NT1TR-ND |
Manufacturer Part#: |
MW7IC2020NT1 |
Price: | $ 16.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 2.14GHZ 24PQFN |
More Detail: | RF Mosfet LDMOS 28V 40mA 2.14GHz 32.6dB 2.4W 24-PQ... |
DataSheet: | MW7IC2020NT1 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 14.71680 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 2.14GHz |
Gain: | 32.6dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 40mA |
Power - Output: | 2.4W |
Voltage - Rated: | 65V |
Package / Case: | 24-PowerQFN |
Supplier Device Package: | 24-PQFN (8x8) |
Base Part Number: | MW7IC2020 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
One of the most popular applications of RF transistors is the MW7IC2020NT1. This MOSFET offers exceptional signal handling capabilities and is capable of delivering wireless power to a variety of consumer electronics. In this article, we discuss the application fields and working principle of MW7IC2020NT1 transistors.
Application Fields
The MW7IC2020NT1 is ideal for mobile and wireless applications due to its low power consumption and high RF performance. For example, the unit is suitable for use in wireless communication systems such as GPS, 3G, 4G and 5G. This MOSFET is also used in WiFi routers, TVs, media streamers and other consumer electronics devices. In addition, the MW7IC2020T is used in various power modules, such as switching mode power supplies (SMPS).
Working Principle
The MW7IC2020NT1 is a metal-oxide-semiconductor field-effect transistor (MOSFET) that can amplify a signal. The transistor consists of three terminals, the source, the gate and the drain. The gate is an insulated gate, which acts as a switch that can be either in an open or closed position. The source and the drain contacts are separated by a gate oxide layer, which allows current to flow.
When a gate voltage is applied, electrons are induced in the channel and gate-source capacitance is built up. This causes a depletion region between the source and the gate, and controls the current flow between the two. As a result, the gate voltage is used to control the current flow, and can be used to amplify a signal.
The MW7IC2020NT1 is unique because of its high transconductance and good RF performance. It has a very high current capability and a low parasitic capacitance, which makes it ideal for wireless applications. Its drain-source breakdown voltage is also quite high, making it resistant to voltage spikes.
Conclusion
The MW7IC2020NT1 is a useful and versatile MOSFET, with applications in many different areas. It has a unique design that allows it to be used in a variety of applications, such as wireless communication and power modules. Its low power consumption and high performance make it ideal for use in mobile and wireless applications.
The specific data is subject to PDF, and the above content is for reference
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