| Allicdata Part #: | N0412N-S19-AY-ND |
| Manufacturer Part#: |
N0412N-S19-AY |
| Price: | $ 0.60 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 40V 100A TO-220 |
| More Detail: | N-Channel 40V 100A (Ta) 1.5W (Ta), 119W (Tc) Throu... |
| DataSheet: |  N0412N-S19-AY Datasheet/PDF |
| Quantity: | 1000 |
| 1950 +: | $ 0.54207 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 1.5W (Ta), 119W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5550pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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N0412N-S19-AY is a transmission field-effect transistor (T-FET) with semi-insulating silicon-on-insulator (SOI) technology. It is an enhancement-type field-effect transistor that is available in an industry-standard SC-59 package with low power dissipation, making it suitable for a wide range of applications. This device is designed to be used in the electronics communication and automotive industry, and it is well-suited for applications such as signal processing, instrumentation, audio, and DC motor control.
N0412N-S19-AY is also known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a unipolar device that uses two insulated-gate terminals to control current flowing between the source and the drain. The device has a gate oxide layer some nanometers thick that serves as a capacitor and provides the control mechanism for the transistor. The gate oxide layer of the device functions as a dielectric between the gate and the channel region.
The N0412N-S19-AY offers some unique features that make it ideal for many applications. It is capable of operating in much higher frequencies than typical MOS transistors, which makes it suitable for high-speed switching. Additionally, it has the highest power handling capability of any T-FET, making it ideal for high-power applications. Finally, the device has a low on-resistance, which reduces power consumption and heat dissipation.
The working principle of N0412N-S19-AY is based on the field-effect mechanism. When a voltage is applied to the gate terminal, it creates an electric field in the dielectric. This electric field modulates the current through the channel and allows the device to be turned on or off. The device is considered to be in its “on” state when the gate voltage is above the threshold voltage. When the gate voltage goes below the threshold, the device is considered to be in its “off” state.
N0412N-S19-AY can be used in a variety of applications, such as signal processing, audio circuitry, switch mode power supplies, and motor control. The device features a low turn-on/off loss and low gate-source capacitance, making it ideal for high-frequency switching. It also has excellent temperature stability and high static-drain current ratings. Additionally, the device has excellent ESD protection, making it suitable for industrial and automotive applications.
In conclusion, N0412N-S19-AY is an excellent option for many electronics applications due to its excellent characteristics and features. Its SOI technology offers increased efficiency, improved thermal performance, and excellent resistance to electrical and environment stresses. Additionally, it is a versatile device that is suitable for a variety of applications, including signal processing, instrumentation, and audio, as well as DC motor control.
The specific data is subject to PDF, and the above content is for reference
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