Allicdata Part #: | N0413N-ZK-E1-AY-ND |
Manufacturer Part#: |
N0413N-ZK-E1-AY |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 40V 100A TO-263 |
More Detail: | N-Channel 40V 100A (Ta) 1.5W (Ta), 119W (Tc) Surfa... |
DataSheet: | N0413N-ZK-E1-AY Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D²Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta), 119W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5550pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
N0413N-ZK-E1-AY is a low capacitance MOSFET designed for use in high speed communications and audio applications and is part of a family of electrosensitive FETs based on Inchange Semiconductor\'s patented technology. This device is Electrostatic Discharge (ESD) insensitive and is characterized by low on-resistance and low gate threshold voltage, low input capacitance and high speed switching capability. This device offers a wide range of benefits to the end user and is ideal for use in high-speed communications systems, audio applications, and other specialty areas.
The working principle of the N0413N-ZK-E1-AY MOSFET is based on the basic operation of all FETs, which is to act as a controllable resistor through the application of electric voltage. In this device, an applied electric voltage across the gate and the source of the device causes a current to flow between the drain and the source, which is proportional to the voltage applied across the gate electrode. The N0413N-ZK-E1-AY is designed to be an enhancement mode MOSFET, which uses an additional gate insulator layer to raise the threshold voltage of the device. The threshold voltage is the minimum voltage required to turn on the device. The application of gate voltage causes a gate-source capacitance, which is responsible for the electrical field that controls the drain-source current.
In addition to the advantages of low on-resistance and low gate threshold voltage, the N0413N-ZK-E1-AY also exhibits low input capacitance and high speed switching capability. Input capacitance, measured in picofarads, is the amount of electrical charge that can be stored on the gate when a small voltage is applied. Lower capacitance improves switching speed, allowing the FETs to switch faster and reduce power consumption. High speed switching capability is also improved by the device\'s low gate-source capacitance, which reduces the time required to turn the FET on and off.
The N0413N-ZK-E1-AY has a variety of applications in industries ranging from consumer electronics to industrial equipment. It can be used to improve the performance and efficiency of power supplies, amplifiers, and other audio and communication systems. In consumer electronics, its use can help reduce power consumption and improve audio quality. In the industrial sector, the N0413N-ZK-E1-AY can greatly enhance the performance of motors, pumps, generators, and other process-related systems. In addition, it can help reduce the size and cost of integrated circuits used in a wide range of electronic products.
N0413N-ZK-E1-AY is a versatile low capacitance MOSFET that can be used in a variety of applications to improve performance, reduce power consumption, and reduce overall costs. Its low threshold voltage and low gate-source capacitance provide a high speed switching capability that is ideal for high speed communications systems and audio applications. Its robust design ensures a reliable operation and its ESD insensitive design allows it to handle a wide range of voltages. The N0413N-ZK-E1-AY can easily be integrated into any existing or new system to ensure a smooth operation and reliable performance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
N0413N-ZK-E1-AY | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 40V 100A TO-2... |
N0412N-S19-AY | Renesas Elec... | 0.6 $ | 1000 | MOSFET N-CH 40V 100A TO-2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...