| Allicdata Part #: | N0434N-S23-AY-ND |
| Manufacturer Part#: |
N0434N-S23-AY |
| Price: | $ 0.56 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 40V 100A TO-262 |
| More Detail: | N-Channel 40V 100A (Ta) 1.5W (Ta), 119W (Tc) Throu... |
| DataSheet: |  N0434N-S23-AY Datasheet/PDF |
| Quantity: | 1000 |
| 2000 +: | $ 0.50645 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | TO-262 |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 1.5W (Ta), 119W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5550pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The N0434N-S23-AY is a single field effect transistor (FET) that is used for various data and communications applications. It is capable of delivering up to 100W of power in a relatively small form factor.
The N0434N-S23-AY is manufactured using the MOSFET technology, which has been widely accepted as the most commonly used type of power transistor. The operating voltage of the N0434N-S23-AY ranges from -6V to +12V and it can handle up to 18A of peak current.
One of the main advantages of this type of power transistor is its ability to operate in both digital and analog applications, without any significant set up time. It is also capable of switching fast and low-noise operation. Therefore, it can be used in a variety of data and communication applications.
The working principle of the N0434N-S23-AY is based on the metal-oxide semiconductor (MOS) field effect principle. In this type of technology, the metal-oxide layer acts as a gate between the source and the drain terminal, which is controlled by the voltage applied at the gate terminal. When the voltage applied to the gate terminal is increased, the amount of current passing through the transistor is increased, and vice versa.
The N0434N-S23-AY is a highly reliable single power transistor that offers a wide range of features and cost effective performance. It is suitable for various operations such as control, switching, communication and pulse control. Furthermore, it is capable of handling high current and temperature levels, thereby making it suitable for high-power applications.
In conclusion, the N0434N-S23-AY is a highly reliable single FET that is suitable for various data and communication applications. Its MOS technology ensures fast switching and low-noise operation. It is capable of handling high current and temperature levels, and is therefore suitable for a variety of high-power applications.
The specific data is subject to PDF, and the above content is for reference
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