| Allicdata Part #: | N0439N-S19-AY-ND |
| Manufacturer Part#: |
N0439N-S19-AY |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 40V 100A |
| More Detail: | N-Channel 40V 90A (Tc) 1.8W (Ta), 147W (Tc) Throug... |
| DataSheet: |  N0439N-S19-AY Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 40V |
| Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 45A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 102nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 5850pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 1.8W (Ta), 147W (Tc) |
| Operating Temperature: | 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220 |
| Package / Case: | TO-220-3 |
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The N0439N-S19-AY is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It is an enhancement-mode device, which means that the device must be driven with a positive gate voltage in order to turn it on. The N0439N-S19-AY can be used in diverse applications, including power amplifiers, digital logic circuits, analog circuits, and a range of other applications.
MOSFETs are constructed from three different active regions: the source, the drain, and the gate. The source and drain are also known as the two terminals, with the gate situated between them. The N0439N-S19-AY is configured into a single-channel device, meaning that the device has only one central channel (or conduction path) between the source and drain terminations. When a positive voltage is applied to the gate of the device, electrons within the channel become more mobile, allowing for current to flow between the source and drain terminations.
When the N0439N-S19-AY is used as an amplifier, current flow between the source and drain terminations (known as saturation current) is controlled by the voltage applied to the gate. The higher the gate voltage, the more current flows between the terminations. Similarly, when the device is configured into a linear circuit, the saturation current is linearly proportional to the gate voltage. When the voltage applied to the gate is too low, the device behaves as an open switch, with no current flowing between the source and drain.
The N0439N-S19-AY has a wide range of uses in both digital and analog circuits. In digital applications, it can be used to offer high-speed switching of circuits, as the device is capable of switching on and off in microseconds. It is also an ideal choice for voltage regulation and pulse generation. Additionally, the N0439N-S19-AY is widely used in radio-frequency (RF) applications, such as amplifiers, oscillators, and mixers.
In analog applications, the device can be used to provide accurately-controlled current amplification and voltage regulation. The device can also be used to construct linear circuits, allowing for precise control of gain. Furthermore, the N0439N-S19-AY is a popular choice for power amplifiers, as it is capable of providing a high amount of power gain. The device is also extremely efficient, making it an ideal choice for battery-powered applications.
Overall, the N0439N-S19-AY is an incredibly versatile and reliable device, capable of handling a variety of tasks in both analog and digital systems. Its single-channel design makes it an ideal choice for a range of applications, and its compatibility with both voltage and current control makes it suitable for precision control applications. In addition, its efficiency makes it an ideal choice for power-sensitive applications, such as battery-powered systems.
The specific data is subject to PDF, and the above content is for reference
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