| Allicdata Part #: | NCP5111DR2GOSTR-ND |
| Manufacturer Part#: |
NCP5111DR2G |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | ON Semiconductor |
| Short Description: | IC DRIVER HI/LOW SIDE HV 8-SOIC |
| More Detail: | Half-Bridge Gate Driver IC Non-Inverting 8-SOIC |
| DataSheet: | NCP5111DR2G Datasheet/PDF |
| Quantity: | 1000 |
| Current - Peak Output (Source, Sink): | 250mA, 500mA |
| Base Part Number: | NCP5111 |
| Supplier Device Package: | 8-SOIC |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 125°C (TJ) |
| Rise / Fall Time (Typ): | 85ns, 35ns |
| High Side Voltage - Max (Bootstrap): | 600V |
| Input Type: | Non-Inverting |
| Series: | -- |
| Logic Voltage - VIL, VIH: | 0.8V, 2.3V |
| Voltage - Supply: | 10 V ~ 20 V |
| Gate Type: | IGBT, N-Channel MOSFET |
| Number of Drivers: | 2 |
| Channel Type: | Synchronous |
| Driven Configuration: | Half-Bridge |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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PMIC - Gate Drivers are critical components of most electronic systems. They are responsible for providing the necessary power outputs to various devices and they are integral in controlling the operation of those devices. The NCP5111DR2G is a high-performance PMIC gate driver that is suitable for many different applications. This article will discuss the application fields and working principles of this device.
NCP5111DR2G is specifically designed to drive MOSFET and IGBT power devices. It is a single-channel, low-side driver which can deliver up to 1.6A of output current with a low on-resistance of 1.5mΩ. It is rated at 400V in the OFF state and 35V in the ON state. The input logic is compatible with DSPs, microcontrollers and other logic circuits. For added safety, this gate driver is protected from latch up and fail-safe.
NCP5111DR2G is a versatile device, capable of being used in many different applications. It can be used for motor control and general power switch applications. It is an ideal device for driving IGBTs in high-efficiency motor drive applications like Uninterruptible Power Supplies (UPS) and variable frequency drives (VFD). It can also be used in class D amplifiers, dc-ac inverters and other power switching applications. The device has been designed to operate with a minimum of power consumption and offers over voltage, over temperature, and UVLO protection.
The NCP5111DR2G is based on a modulated pulse width switching technique (MPSW). This technique allows the device to deliver an extremely high energy efficiency with no cross conduction. The device has a built-in boot strap diode which eliminates the need for an external boot strap capacitor. The device is capable of providing a very low start up current of only 20mA and allows for a fast switching speed of up to 5MHz.
The NCP5111DR2G also features a patented life-loss protection algorithm. This algorithm helps protect the device from overheating and extends its life by automatically reducing the output when the power dissipation is too high. The device also features a programmable dead time between both sides of the device to minimize shoot-through current. This improves power efficiency, reduces power dissipation and saves energy.
The NCP5111DR2G is an ideal solution for many different application needs. It is an efficient and reliable device which provides high performance and safety. Its built-in protection features, fast switching speeds and low power consumption make it well-suited for many different applications. Its wide range of features and wide operating voltage make it a great choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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NCP5111DR2G Datasheet/PDF