NDB6020P Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-65°C ~ 175°C (TJ)
Power Dissipation (Max):	60W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1590pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	35nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	50 mOhm @ 12A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	4.5V
Current - Continuous Drain (Id) @ 25°C:	24A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Last Time Buy
Packaging:	Tape & Reel (TR)

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NDB6020P Application Field and Working Principle

The NDB6020P is a N-Channel Enhancement Mode Field Effect Transistor (FET). This product is designed for use in high-power applications such as Audio, Video, and Telecom power supplies. It features integrated over temperature protection, reverse battery protection, and thermal shutdown. This FET is suitable for use in a variety of power applications and can be used as an alternative to a PNP or JFET device.The NDB6020P is a N-channel insulated gate bipolar transistor (IGBT). It features excellent switching performance and low gate charge with low gate turn-on and turn-off thresholds. The device is also able to handle high voltage and current applications and has a low on-state resistance. Since the FET is insulated, it eliminates the need for additional isolation devices in the power circuit design.The NDB6020P is used as a power switch in a variety of applications such as motor drives, power supplies, loudspeaker systems, and audio amplifiers. The device can be used as an on/off switch, a safety interlock switch, and as a current limit switch to reduce power losses in the system.The working principle of a FET is based on the movement of charge carriers within the transistor junction. A positive gate voltage makes the gate to source resistance larger and the current conduction from source to drain is disrupted. Inversely, a negative gate voltage makes the gate to source junction resistance smaller and increases the source to drain current.The NDB6020P has a low turn-on time and high speed turn-off capability. This FET utilizes a high peak current capability, making it suitable for use in high power applications. The FET also has excellent thermal stability and a low threshold voltage (Vgs). This makes it suitable for a variety of control applications where low-voltage control is desired.The NDB6020P is also designed for use in over-voltage protection circuits. It provides a hysteresis at the output which makes it suitable for use as a breaker switch in audio and other high-voltage applications.The NDB6020P is capable of handling high temperatures, making it suitable for use in high-power applications. This FET is also protected from circuit damage due to over-voltage conditions and reverse battery applications.In summary, the NDB6020P is a versatile FET with excellent switching performance and low on-state resistance. It is designed for use in high-power applications and can be used as an alternative to a PNP or JFET device. It has an integrated over temperature protection, reverse battery protection, and thermal shutdown and is capable of handling high temperatures and currents. The FET also has excellent thermal and low-voltage control characteristics, making it suitable for a wide range of applications.

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