NDB6060 Allicdata Electronics

NDB6060 Discrete Semiconductor Products

Allicdata Part #:

NDB6060TR-ND

Manufacturer Part#:

NDB6060

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 48A TO-263AB
More Detail: N-Channel 60V 48A (Tc) 100W (Tc) Surface Mount D²P...
DataSheet: NDB6060 datasheetNDB6060 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Power Dissipation (Max): 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 25 mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NDB6060 is an advanced field effect transistor (FET) designed primarily for use in high-power switching and speed control applications. It is an example of a single-gate MOSFET, with the gate and other terminals connected in an integrated circuit. The main advantages of using an NDB6060 in an application is its extremely high current-pulsed handling capability and high input impedance. This makes it an ideal choice for power switching and speed control applications.

The basic working principle of the NDB6060 is based on the principle of field effect transistor (FET) operation. In this type of FET, the controlling electric field is generated by the flow of electric current between the gate terminal of the transistor and the source terminal. The field generated in turn generates an electric field at the source terminal, which is proportional to the applied gate voltage.

When the gate voltage is varied, the electric field at the source terminal changes, causing a variation in the current flowing through the channel and thus controlling the current through the device. This functionality is utilized in the NDB6060 for high-power switching and speed control applications.

The NDB6060 is capable of in-line voltage control and can handle high-current pulsed operations. The high input impedance and the ability to control the voltage through the device makes it extremely suitable for applications in power switching and speed control. This, coupled with its low on-resistance and the relatively small size of the device makes it an ideal choice for efficient power switching and speed control systems.

The NDB6060 is also capable of providing thermal protection to devices, as it is capable of detecting any excessive heat generated and shutting down the device automatically if required. This makes it an ideal choice for applications where it may be subjected to high temperatures and the possibility of thermal runaway.

The NDB6060 is also available in a variety of package types and sizes, allowing for a wide range of applications. This includes surface mount packages, flat packages, and packages with various lead lengths. This allows the customer to choose the package type and size that best suits their application.

In conclusion, the NDB6060 is an ideal choice for applications that require high-power switching and speed control. Its high current-peak handling capability, low on-resistance, and thermal protection make it an excellent device for efficient and reliable power switching and speed control systems. Similarly, the availability of different package types and sizes enables the customer to select the best package for their application.

The specific data is subject to PDF, and the above content is for reference

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