| Allicdata Part #: | NDC631N-ND |
| Manufacturer Part#: |
NDC631N |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 20V 4.1A SSOT-6 |
| More Detail: | N-Channel 20V 4.1A (Ta) 1.6W (Ta) Surface Mount Su... |
| DataSheet: |  NDC631N Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package: | SuperSOT™-6 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.6W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 365pF @ 10V |
| Vgs (Max): | 8V |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 60 mOhm @ 4.1A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 4.1A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The NDC631N is a SuperFET III power MOSFET device that is designed to provide improved power density, lower on-resistance values, and improved switching speeds. This device was developed as an extension to ON Semiconductor\'s SuperFET technology and is engineered for enhanced on state characteristics. The NDC631N is specifically designed for new applications such as notebook computers, PDAs, and other lightweight portables where low package profiles, increased power handling and improved efficiency are important. It is suitable for a variety of high current, low voltage applications and is offered in popular packages including TO-34, TO-220, and the industry-leading SGSD. In addition, the NDC631N is pin-to-pin compatible with leading industry packages allowing for increased performance in the same footprint.
Application Field and Working Principle of NDC631N
The NDC631N is a high performance power MOSFET with improved performance compared to other devices. It has a wide range of application fields such as switching power supply, motor control, DC-DC conversion, lighting control, and more. As for the working principle, it is a voltage-controlled field-effect transistor (FET). A voltage is applied to its gate terminal to control the flow of current. It also has a source terminal, which provides the power to be switched, and a drain terminal, which takes the current leaving the device. The advantage of using FETs is that they have low on-state resistance, which reduces power losses due to heating.
Advantages of NDC631N
The NDC631N is a high performance power MOSFET with improved performance compared to other devices. It offers increased power density, lower on-resistance values, and improved switching speeds. It also has improved switching frequency that allows designers to increase power delivery efficiency and thermal management. The Unique Single-Mask Process enables NDC631N to deliver low on-state loss at high current levels. This mobile low-voltage switch also has an extended Life Span at High Current operation, making it a reliable solution for applications in heavy-duty applications. The NDC631N is offered in multiple packages such as TO-34, TO-220, and SGSD offering engineers to adopt the most suitable footprint for their design.
Conclusion
The NDC631N is a high performance power MOSFET with improved performance compared to other devices. It offers many advantages such as increased power density, lower on-resistance values, improved switching speeds, extended life span, and more. It is ideal for a variety of applications such as switching power supply, motor control, DC-DC conversion, lighting control, and more. It is offered in multiple packages such as TO-34, TO-220, and SGSD allowing engineers to select the best footprint for their design.
The specific data is subject to PDF, and the above content is for reference
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