NDC651N Discrete Semiconductor Products |
|
Allicdata Part #: | NDC651NTR-ND |
Manufacturer Part#: |
NDC651N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 3.2A SSOT6 |
More Detail: | N-Channel 30V 3.2A (Ta) 1.6W (Ta) Surface Mount Su... |
DataSheet: | NDC651N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | SuperSOT™-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 290pF @ 15V |
Vgs (Max): | 20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NDC651N transistor is a discrete-component, silicon N-Channel Enhancement-Mode Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) that is manufactured by Origin Technology. It is also known as the NDC 651N PowerMOSFET, and is composed of vertically-integrated power MOSFETs.
The NDC651N is widely used in various electronic applications, such as power-supply systems and digital signal processing, due to its compact size, high efficiency, and high power density. It is widely used in motor drive applications, power converters, power amplifiers, low-side switching applications, phase-shifted full bridges, motor control, and high-frequency switching applications. This makes it an attractive choice for various applications, as it is capable of handling high energy density and high power density. It is also suitable for low temperature environments, since it has a temperature operating range of -55C to 125C.
The NDC651N transistor has three distinct types of working principles. Firstly, it uses an electrostatic-field effect to provide low turn-on and high turn-off current gains. Secondly, the NDC651N also uses an avalanche-effect to provide high voltage blocking, and thirdly, it utilizes charge-sharing capabilities to provide low gate capacitance, fast switching, and good temperature stability. These three different operating principles enable the transistor to be used in numerous applications.
The NDC651N is packaged in a standard 8-pin SOIC package and has numerous features such as an integrated ESD protection, fast switching speeds, and an ultra-low power consumption. These features make it ideally suited for high-speed applications, where the incorporation of an ESD protection circuit is essential. This transistor is also suitable for power-intensive applications owing to its low power consumption and high-output power.
In conclusion, the NDC651N is an excellent choice for a wide range of applications and is designed to provide excellent performance and long-term reliability. Its various features enable it to be used in various applications, such as motor drive applications, power converters, power amplifiers, low-side switching applications, and more. Its integrated ESD protection, fast switching speeds and low power consumption make it appropriate for high-speed and power-intensive applications.
The specific data is subject to PDF, and the above content is for reference
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...