| Allicdata Part #: | NDDL01N60Z-1G-ND |
| Manufacturer Part#: |
NDDL01N60Z-1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 600V 0.8A IPAK |
| More Detail: | N-Channel 600V 800mA (Ta) 26W (Tc) Through Hole IP... |
| DataSheet: |  NDDL01N60Z-1G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600V |
| Current - Continuous Drain (Id) @ 25°C: | 800mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 15 Ohm @ 400mA, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs: | 4.9nC @ 10V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 92pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 26W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | IPAK (TO-251) |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The NDDL01N60Z-1G is a metal oxide semiconductor field-effect transistor (MOSFET) designed for high-power and high-voltage applications. It is a single-cell, N-channel MOSFET, which operates with a maximum drain-to-source voltage of 600 volts. It is a popular device, due to its simple operation, ability to handle high power, low on-state resistance, and high breakdown voltage rating.
The MOSFET is a voltage-controlled device, meaning that it is switched on and off by applying a voltage to the gate terminal. When a small voltage (typically around 4 volts) is applied to the gate, it attracts electrons and creates an electric field, which in turn attracts positively charged holes in the channel of the transistor. The resistivity of the channel decreases, and the device is turned on. When the gate voltage is reduced or removed, the electric field collapses and the device is turned off.
The device has a maximum continuous drain current of 180 amps and a maximum continuous drain current of 30 amps. It features a rugged silicon die structure, which is designed to provide superior thermal performance. The surface mount package and low on-state resistance allows for efficient heat dissipation and improved power density. The device also features an internal gate diode, which is designed to reduce switching losses.
The NDDL01N60Z-1G is an ideal choice for a wide range of applications, including power management, LED lighting, robotics, motor control, and power conversion. It can also be used in various switching applications, such as switching regulators, high-side/low-side switches, and DC-DC converters. The device is also suitable for use in audio amplifier circuits and power amplifiers.
In conclusion, the NDDL01N60Z-1G is a popular single-cell, N-channel MOSFET designed for high-power and high-voltage applications. Its low on-state resistance and high breakdown voltage rating make it an ideal choice for a wide range of applications, including power management, LED lighting, robotics, motor control, and power conversion. The device features a rugged silicon die structure, which provides superior thermal performance, and also features an internal gate diode, which is designed to reduce switching losses.
The specific data is subject to PDF, and the above content is for reference
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