Allicdata Part #: | NDDL01N60ZT4G-ND |
Manufacturer Part#: |
NDDL01N60ZT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 0.8A DPAK |
More Detail: | N-Channel 600V 800mA (Ta) 26W (Tc) Surface Mount D... |
DataSheet: | NDDL01N60ZT4G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 800mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 15 Ohm @ 400mA, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.9nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 92pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 26W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nowadays, transistors are fundamental elements used in a variety of devices, such as computers, phones and medical devices. Among hundreds of types, NDDL01N60ZT4G is the most common one in its application field, which is a type of MOSFET single (Metal oxide semiconductor field effect transistor) transistor.In order to have a better understanding of this type of transistor and its application, we will first discuss its working principle and then look into its application field.
Working Principle of NDDL01N60ZT4G
At the heart of MOSFET single transistors lies a channel that is capable of conducting current due to the electric field that it generates. A channel is created between the Source and the Drain and voltage applied across the gate and the channel creates an electrical field that controls the flow of current in the channel. The amount of current that can be driven by a MOSFET is determined by the width, the thickness and the relative concentrations of the silicon atoms within the channel region. This type of transistor can operate in both enhancement and depletion mode; the latter is a type of mode wherein the voltage applied to the gate creates a reverse bias, thus depleting the current that can flow through the channel.
In addition to the channel, NDDL01N60ZT4G also have a source and a drain to complete their structure. The source and the drain are the two contacts made to the outside world and they are pointed in opposing directions. As current flows through the channel and reaches the drain, it exits the transistor and enters the circuit, completing the circuit and transmitting electrical energy. The drain is typically the output of the transistor, whilst the source is the input, and obviously the gate is the control element.
Application of NDDL01N60ZT4G
NDDL01N60ZT4G is extremely useful transistors in many modern day applications, such as power management, electrical engineering and designing, international circuit applications and more. This single transistor is usually employed in power management applications where power consumption needs to be optimized as well as in low-loss, low-power switches to provide signal conversions.
This type of transistor can also be used to improve signal quality in telecommunication systems and digital circuit switched networks, as well as to reduce power consumption in computer hardware. This MOSFET single transistor can also be used to replace the traditional bi-polar junction transistor, which has a great advantage over its bi-polar counterpart due to its higher switching speed, wider range of operating temperature and low power dissipation.
In terms of industrial applications, NDDL01N60ZT4G is a popular solution as it enables efficient motor control, as well as to regulate or amplify wave forms. It\'s also used in a variety of military systems, such as navigation systems, radar systems and communications networks, among others.
Overall, NDDL01N60ZT4G is certainly a versatile single transistor that can be employed in a great number of application fields. Due to its many advantages over bi-polar junction transistors, it is a popular choice among electrical engineers. Its versatile application make it an important element in any modern day device.
The specific data is subject to PDF, and the above content is for reference
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