Allicdata Part #: | NDPL070N10BGOS-ND |
Manufacturer Part#: |
NDPL070N10BG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 70A TO220-3 |
More Detail: | N-Channel 100V 70A (Ta) 2.1W (Ta), 72W (Tc) Throug... |
DataSheet: | NDPL070N10BG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V, 15V |
Rds On (Max) @ Id, Vgs: | 10.8 mOhm @ 35A, 15V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2010pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 2.1W (Ta), 72W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
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The NDPL070N10BG is a unique type of transistor. It is a single-gate FET (Field-Effect Transistor) of the depletion type. It utilizes a silicon junction to manage currents from less than a kilo-amp (mA) to more than 10 amps (A).
Application Field
The main application of the NDPL070N10BG is in the field of power electronics and in-circuit control. It is particularly useful where low on-state resistance is desired to reduce or eliminate switching losses. The device can be used as a low-side switch in switching applications, as a simple amplifier with feedback control, or in automotives as an active power supply.
The NDPL070N10BG also has other applications in data processing and communications, such as in video switching, radio frequency (RF) switching, and data communication networks. Its low on-state resistance makes it cost effective for these types of applications where low-level signal switching is required.
Working Principle
The NDPL070N10BG depletion mode FET is a N-channel device with single gate. It works by applying a negative voltage to the gate, which attracts electrons near the gate, forming an electron channel. This channel allows current to flow between the source and drain terminals when a positive voltage is applied.
The advantage of the NDPL070N10BG over other field-effect transistors is its low on-state resistance, due to its design. This allows it to operate at higher frequencies than other FETs, which is useful for applications where low-level signals are being switched quickly. It also has a higher bandwidth, making it useful for communication and data processing networks.
The NDPL070N10BG is also relatively insensitive to temperature, making it a good choice for automotive applications. Its flip-off voltage is typically high, so it can withstand high switching surges without damage. Furthermore, it is quite small and requires minimal space in-circuit, making it an ideal choice for applications where space is a concern.
Conclusion
In conclusion, the NDPL070N10BG single-gate FET is an ideal choice for applications where low-level signals must be switched quickly, such as in data and communication networks, video switching, radio frequency switching, and automotive power supplies. Its low on-state resistance allows it to operate at higher frequencies, and its relatively high flip-off voltage ensures it can withstand high switching surges without damage. Furthermore, its small size and low cost make it a cost-effective solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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