NDPL180N10BG Allicdata Electronics
Allicdata Part #:

NDPL180N10BGOS-ND

Manufacturer Part#:

NDPL180N10BG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 180A 100V TO220-3
More Detail: N-Channel 100V 180A (Ta) 2.1W (Ta), 200W (Tc) Thro...
DataSheet: NDPL180N10BG datasheetNDPL180N10BG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 180A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Rds On (Max) @ Id, Vgs: 3 mOhm @ 15V, 50A
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 50V
FET Feature: --
Power Dissipation (Max): 2.1W (Ta), 200W (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
Description

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The NDPL180N10BG is a type of FET, or field-effect transistor, which is a type of single MOSFET (metal–oxide–semiconductor field-effect transistor). It is a general-purpose transistor used in a variety of electronic applications, such as power management and switching. In this article, we will discuss the application field and working principle of the NDPL180N10BG.

The NDPL180N10BG is widely used in various applications, including amplifier circuits, power supplies, DC-to-DC converters, voltage regulation circuits, logic level conversion circuits, and more. It is also used in automotive applications such as airbag systems and fuel injection systems. In addition, it is used in power management and control systems such as lighting, motor speed and direction control, HVAC (heating, ventilation and air conditioning) systems, and more.

The main features of the NDPL180N10BG include a breakdown voltage of 180V, a drain-source on-state resistance of 5.3 ohms, a gate-source threshold voltage of -10V, a typical gate-source capacitance of 19 pF, and a typical power dissipation of 1.9W. It is also available in an SMD package, making it suitable for surface mount applications.

The working principle of the NDPL180N10BG is based on the MOSFET structure. It consists of a source, gate, and drain, which are all connected to the semiconductor substrate. The gate is connected to a capacitor, which allows for voltage control of the source and drain, and the source and drain are connected to the load. When the correct voltage is applied to the gate, it allows current to flow from the source to the drain, thus energizing the load.

In summary, the NDPL180N10BG is a single MOSFET which is widely used for a variety of applications. It has a breakdown voltage of 180V, a drain-source on-state resistance of 5.3 ohms, a gate-source threshold voltage of -10V, a typical gate-source capacitance of 19 pF, and a power dissipation of 1.9W. Its working principle is based on the MOSFET structure, which allows for voltage control of the source and drain.

The specific data is subject to PDF, and the above content is for reference

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