Allicdata Part #: | NDPL180N10BGOS-ND |
Manufacturer Part#: |
NDPL180N10BG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 180A 100V TO220-3 |
More Detail: | N-Channel 100V 180A (Ta) 2.1W (Ta), 200W (Tc) Thro... |
DataSheet: | NDPL180N10BG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 180A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V, 15V |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 15V, 50A |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6950pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 2.1W (Ta), 200W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
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The NDPL180N10BG is a type of FET, or field-effect transistor, which is a type of single MOSFET (metal–oxide–semiconductor field-effect transistor). It is a general-purpose transistor used in a variety of electronic applications, such as power management and switching. In this article, we will discuss the application field and working principle of the NDPL180N10BG.
The NDPL180N10BG is widely used in various applications, including amplifier circuits, power supplies, DC-to-DC converters, voltage regulation circuits, logic level conversion circuits, and more. It is also used in automotive applications such as airbag systems and fuel injection systems. In addition, it is used in power management and control systems such as lighting, motor speed and direction control, HVAC (heating, ventilation and air conditioning) systems, and more.
The main features of the NDPL180N10BG include a breakdown voltage of 180V, a drain-source on-state resistance of 5.3 ohms, a gate-source threshold voltage of -10V, a typical gate-source capacitance of 19 pF, and a typical power dissipation of 1.9W. It is also available in an SMD package, making it suitable for surface mount applications.
The working principle of the NDPL180N10BG is based on the MOSFET structure. It consists of a source, gate, and drain, which are all connected to the semiconductor substrate. The gate is connected to a capacitor, which allows for voltage control of the source and drain, and the source and drain are connected to the load. When the correct voltage is applied to the gate, it allows current to flow from the source to the drain, thus energizing the load.
In summary, the NDPL180N10BG is a single MOSFET which is widely used for a variety of applications. It has a breakdown voltage of 180V, a drain-source on-state resistance of 5.3 ohms, a gate-source threshold voltage of -10V, a typical gate-source capacitance of 19 pF, and a power dissipation of 1.9W. Its working principle is based on the MOSFET structure, which allows for voltage control of the source and drain.
The specific data is subject to PDF, and the above content is for reference
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