NP36P06KDG-E1-AY Discrete Semiconductor Products |
|
| Allicdata Part #: | NP36P06KDG-E1-AYTR-ND |
| Manufacturer Part#: |
NP36P06KDG-E1-AY |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET P-CH 60V 36A TO-263 |
| More Detail: | P-Channel 60V 36A (Tc) 1.8W (Ta), 56W (Tc) Surface... |
| DataSheet: |  NP36P06KDG-E1-AY Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 175°C (TJ) |
| Power Dissipation (Max): | 1.8W (Ta), 56W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 29.5 mOhm @ 18A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NP36P06KDG-E1-AY is a part of the NPN Transistor family. It is a type of Field-Effect Transistor (FET), specifically a MOSFET (Metal-Oxide-Semiconductor FET). This type of transistor is similar to traditional BJTs (Bipolar Junction Transistors), but instead of using a current applied to the emitter-base junction, it uses an electric field to operate. In the case of the NP36P06KDG-E1-AY, the source is connected to ground, the drain is connected to the load, and the gate is connected to the control voltage. The NP36P06KDG-E1-AY is a single FET, meaning that it only has one channel. Because of this, it is considered a low-power device, as it can only handle up to about 6A of continuous current.
The working principle of the NP36P06KDG-E1-AY is relatively simple. When a voltage is applied to the gate, an electric field is created which causes the FET to conduct, allowing current to flow from the source to the drain. When the gate voltage is removed, the electric field is removed and the FET becomes non-conductive, interrupting current flow. The voltage applied to the gate determines how much current is allowed to flow through the FET, as well as the amplitude of the voltage allowed to pass through.
The primary application of the NP36P06KDG-E1-AY is in low-power circuits. Typical applications include motor controls, switching circuits, and low-power amplifiers. It can be used as an amplifier with negative feedback, as well as a voltage regulator in many circuits. It is also commonly used as a switching device for power management applications, since it can switch currents on and off quickly.
The NP36P06KDG-E1-AY is a useful device in many applications where low power, high performance, and simple operation are needed. Its simple operation, low cost, and small size makes it ideal for use in a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| NP36P04KDG-E1-AY | Renesas Elec... | 0.0 $ | 1000 | MOSFET P-CH 40V 36A TO-26... |
| NP36P06KDG-E1-AY | Renesas Elec... | 0.0 $ | 1000 | MOSFET P-CH 60V 36A TO-26... |
| NP36P06SLG-E1-AY | Renesas Elec... | 0.0 $ | 1000 | MOSFET P-CH 60V 36A TO-25... |
| NP36P04SDG-E1-AY | Renesas Elec... | 0.0 $ | 1000 | MOSFET P-CH 40V 36A TO-25... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...