NP36P06SLG-E1-AY

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NP36P06SLG-E1-AY is a single-N-Channel enhancement-mode MOSFET physical package in a small footprint of 3.3mm x 2mm featuring low on-resistance and high-speed switching. It is part of a family of N-channel MOSFETs from ON Semiconductor with a maximum on-state resistance of 33mΩ. It has a 55V drain-source breakdown voltage and is available in either TO-251 or TSOP-6 packages.

The NP36P06SLG-E1-AY is an enhancement-mode device, which is a type of field effect transistor (FET) where an electric field can modulate the electrical current flow through the device. It can be thought of as a type of switch or valve that can be controlled by a voltage. Unlike other types of FETs, enhancement-mode MOSFETs do not normally conduct current until a “gate” voltage is applied, which turns the device on. This makes them ideal for use as switches in electronic circuits.

The NP36P06SLG-E1-AY application field is a suitable choice for high power, high-speed switching applications, such as motor control, power conversion, and switched-mode power supplies. This device operates with a Gate-Source voltage range of -2 to +8V, and a Gate-Drain range of ±10V, allowing for a wide range of switch control capabilities. It also has features such as lead-free finish, low gate-charge for fast switching applications, and gate protection diode for surge protection. The device can operate at a maximum temperature of 175° C, making it suitable for use in automotive, telecom and industrial power sectors.

To operate correctly, the NP36P06SLG-E1-AY requires a gate-source voltage of 4.5V (VGS). When VGS is applied to the gate, a positive voltage builds up and allows the device to turn on, which causes the drain-source voltage to turn on and allow current to flow through the device. When the gate-source voltage is removed, the device turns off, and the drain-source voltage drops to 0V, stopping current flow. The device has a maximum drain-source voltage rating of 55V and a maximum drain current of 30A, meaning it can be used in applications that require a considerable amount of current.

By combining a small form factor, low on-resistance, high breakdown voltage, and other features, the NP36P06SLG-E1-AY is a versatile and reliable single-N-Channel MOSFET ideal for a variety of high-power and high-speed switching applications. It is available in either TO-251 or TSOP-6 packages, making it easy to integrate with existing systems.

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