NP40N10PDF-E1-AY Allicdata Electronics
Allicdata Part #:

NP40N10PDF-E1-AY-ND

Manufacturer Part#:

NP40N10PDF-E1-AY

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 100V 40A TO-263
More Detail: N-Channel 100V 40A (Tc) 1.8W (Ta), 120W (Tc) Surfa...
DataSheet: NP40N10PDF-E1-AY datasheetNP40N10PDF-E1-AY Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 27 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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The NP40N10PDF-E1-AY is a single N-Channel enhancement mode power field-effect MOSFET used in power management applications. It has been designed to maximize the power efficiency of devices used in a variety of applications, such as automotive and consumer electronics. This article provides a detailed description of the NP40N10PDF-E1-AY application field, working principle and other specific features.

NP40N10PDF-E1-AY Application Field

The NP40N10PDF-E1-AY is a versatile power MOSFET and has been designed for a broad range of applications including, but not limited to, power supplies, DC/DC converters, motor control and general-purpose switching. It is also suitable for powerful converters and drives, such as programmable linear technology (PLT) based motor control converters and Class D audio amplifiers.

The device has been designed to provide high performance power efficiency and current handling capability in a small package, allowing for space-saving layouts. Due to its high resistance to current loss and excellent thermal characteristics, the NP40N10PDF-E1-AY is capable of efficiently managing the power in advanced power systems and provide efficient operation over a wide range of temperatures.

Working Principle and Features

The NP40N10PDF-E1-AY power MOSFET operates as an enhancement mode device and is characterized by low gate resistance and fast switching performance. Its unique structure enables high voltage operation up to 600V and peak current up to 1080A. The device features a low on-state resistance (RDS(on)) of 0.025 Ω which can significantly reduce EMF losses and improve power system efficiency. Its high peak current capability allows for reliable overcurrent protection in a variety of applications.

The NP40N10PDF-E1-AY is equipped with an improved surface mount technology which provides better thermal performance, electronic stability and improved assembly process. The device has a larger drain-gate capacitance that ensures low gate charge for faster switching and better system efficiency. The device also features a simple gate structure which eliminates the need for extra power gate driver to reduce system cost and complexity.

The device is designed for operation at -40°C to +100°C temperature range and is rated for -55°C to +125°C operation. It also features ESD protection up to 4 kV HBM and latch-up protection to inhibit circuit latch. The NP40N10PDF-E1-AY has an international standard metallic lead frame, which is compatible with both surface mount and through-hole (TH) assembly processes.

Conclusion

The NP40N10PDF-E1-AY is a high-performance and efficient single N-Channel enhancement mode power field-effect MOSFET. It has been designed to provide highly reliable operation and feature a variety of advanced technologies for power systems. The device is applicable for a broad range of process-critical applications, including power supplies, DC/DC converters and motor control systems, as well as general-purpose switching.

The specific data is subject to PDF, and the above content is for reference

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