| Allicdata Part #: | NP40N10YDF-E1-AY-ND |
| Manufacturer Part#: |
NP40N10YDF-E1-AY |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 100V 40A MP-25ZP |
| More Detail: | N-Channel 100V 40A (Tc) 1W (Ta), 120W (Tc) Surface... |
| DataSheet: |  NP40N10YDF-E1-AY Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Last Time Buy |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 25 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 71nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3150pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 1W (Ta), 120W (Tc) |
| Operating Temperature: | 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-HSON |
| Package / Case: | 8-PowerLDFN |
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NP40N10YDF-E1-AY is a type of single-channel enhancement mode field effect transistor (FET). FETs are widely used in modern electronic circuits due to their advantages over other types of transistors. This type of FET is used in a wide range of applications and is one of the most common types of FETs used in industry.
The NP40N10YDF-E1-AY FET is a high-voltage and high-current device with a drain-source voltage of up to 100 volts (Vds) and a drain current capacity of up to 40 amps (Id). It has a very high input impedance and can be used in applications with high frequencies up to 1 GHz. It is available in the Through-Hole D-Pak TO-220 package and is well-suited for surface mount or through-hole mounted applications.
The device is designed to be used in high-voltage, high-frequency applications and is suitable for switching, linear and audio power applications. It can be used in power conversion, audio power amplifiers, motor control, and other applications requiring high speed switching.
The working principle of the NP40N10YDF-E1-AY FET is similar to that of other FETs. It is an enhancement-mode type device where the gate voltage is used to control the current flow between the drain and the source. A positive voltage applied to the gate will create an inversion layer and increase the current flow, while a negative voltage will reduce the current flow. This type of FET is fast and has very low on-resistance compared to other types of transistors, making it ideal for high-speed switching applications.
The NP40N10YDF-E1-AY FET is widely used in a variety of applications. It is often used in audio power amplifiers as it is able to deliver high power levels with low distortion. It is also used in motor control applications as its high input impedance makes it suitable for driving high power motors. The device is also commonly used in power conversion applications, where its high switching speed and low on-resistance allows it to deliver high efficiency.
The NP40N10YDF-E1-AY FET is an effective and reliable device and is widely used in many applications. It has a high input impedance and can be used in high frequencies up to 1 GHz, making it suitable for high-speed switching applications. It has a low on-resistance, making it ideal for power conversion, and is capable of delivering high power levels with low distortion, making it suitable for audio power amplifiers.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| NP40N10PDF-E1-AY | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 100V 40A TO-2... |
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