Allicdata Part #: | NP50P04KDG-E1-AY-ND |
Manufacturer Part#: |
NP50P04KDG-E1-AY |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET P-CH 40V 50A TO-263 |
More Detail: | P-Channel 40V 50A (Tc) 1.8W (Ta), 90W (Tc) Surface... |
DataSheet: | NP50P04KDG-E1-AY Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 |
Mounting Type: | Surface Mount |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta), 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5100pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NP50P04KDG-E1-AY is a single N-channel power field-effect transistor (FET). It is part of the NDPAK-6L, which utilizes the latest in advanced power FETs to maximize performance in power control and conversion applications. The device features an ultra-low on-state resistance, making it ideal for applications such as high-speed switching, motor control, and other power-related operations. This FET also offers versatile protection features and is capable of operating at a wide range of temperatures.
The NP50P04KDG-E1-AY is typically used in switching applications because of its low on-resistance. When operating in low-current power control applications, the device provides very low current flow, making it an excellent choice for controlling power applications such as switching DC-DC converters, uninterruptible power supplies, linear power converters, and motor control systems. The device also offers reliable protection and safe operation due to its low thermal resistance. This makes it well-suited for use in high-temperature applications where thermal management is of utmost importance.
The working principle of the NP50P04KDG-E1-AY is based on the movement of an electric field across a conductive gate layer, which in turn creates an inhibitory electric field across the underlying N-type semiconductor material. When the gate to source voltage is increased, it increases the electric field across the N-type semiconductor layer, creating stronger and stronger inhibition. This increased inhibition restricts the current flow, and so the device acts as a current switch.
When operating in switching applications, the on-state resistance of the NP50P04KDG-E1-AY is extremely low, making it an ideal candidate for such applications. It is possible to lower the on-state resistance even further by using an integrated circuit (IC) driver to control the device, allowing for greater control and faster switching. The device is also capable of regenerative operation, allowing for higher efficiency and motor control. When the device is turned off, its body diode provides reverse current protection and a path for current to return to the source.
In conclusion, the NP50P04KDG-E1-AY is a single N-channel power FET capable of reliably providing very low on-state resistance and very high efficiency. It is used in various switching and motor control applications, as well as power control and conversion applications. The device is designed for wide temperature operation and is highly reliable in both low- and high-temperature applications. Additionally, it is capable of regenerative operation, which helps to increase efficiency. The working principle is based on an electric field that is used to inhibit current flow and provides a current switch.
The specific data is subject to PDF, and the above content is for reference
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