NP50P04SDG-E1-AY Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NP50P04SDG-E1-AY is a 30 V single N-Channel depletion mode Power MOSFET, which is manufactured by Toshiba, a large Japanese semiconductor company. The main feature of the NP50P04SDG-E1-AY is its low on-resistance of 0.05 ohms, which makes it suitable for use in a wide range of applications. Additionally, the device features a high-speed response time and low gate-to-source voltage for improved switching performance.

The NP50P04SDG-E1-AY is a depletion mode FET, which means it is normally off without any voltage applied to the control terminal – the gate. When the voltage at the gate is raised, the MOSFET will turn on and allow current to flow through. This makes this FET suitable for use in applications such as switching, voltage regulation, and power amplification.

The NP50P04SDG-E1-AY has an extremely low RDS(on) of 0.05 ohms. Its low on-resistance makes it ideal for use in power switching applications such as DC-DC converters and power amplifiers. In these applications, the low resistance keeps power losses to a minimum, enabling higher efficiency and better performance.

The device also has a fast switching speed, with a turn-on time of 10 ns and a turn-off time of 15 ns. This makes it suitable for use in high-speed circuits, where fast switching speeds are important for achieving optimal performance.

The NP50P04SDG-E1-AY has a low gate-to-source voltage of 3 V, which enables it to be driven easily by logic-level signals. This makes the device suitable for implementation in digital circuits, such as computer power supplies, microprocessors, and digital control systems.

In addition to its fast switching speed and low gate threshold voltage, the NP50P04SDG-E1-AY also incorporates a number of other features to make it a suitable choice for a wide range of applications. It has a low thermal resistance of 0.5 °C/W, which allows it to dissipate heat quickly and efficiently. Additionally, the device has an ESD rating of 2 kV and a maximum drain-source voltage of -30 V, which make it suitable for use in high voltage applications.

Overall, the NP50P04SDG-E1-AY is a high performance depletion mode power MOSFET that is suitable for use in a wide range of applications, from switching and voltage regulation to power amplification and digital circuits. Its low on-resistance and fast switching speed make it ideal for power switching applications, while its low gate-to-source voltage and high ESD rating make it suitable for use in digital circuits.

The specific data is subject to PDF, and the above content is for reference