NP55N055SDG-E1-AY

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252 (MP-3ZK)
Mounting Type:	Surface Mount
Operating Temperature:	175°C (TJ)
Power Dissipation (Max):	1.2W (Ta), 77W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4800pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	96nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	9.5 mOhm @ 28A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	55A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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NP55N055SDG-E1-AY Application Field and Working Principle

NP55N055SDG-E1-AY is a general-purpose N-channel MOSFET produced by On Semiconductor, one of the leading global semiconductor suppliers. This transistor is widely used in consumer, automotive, and industrial electronics applications. The NP55N055SDG-E1-AY features high performance with low power consumption, making it a popular choice for energy-efficient designs. In this article, we will discuss the application field and working principle of NP55N055SDG-E1-AY.

APPLICATIONS

The NP55N055SDG-E1-AY can be used in a wide range of applications such as power management, motor control, and signal processing. It is particularly suitable for use in switching and amplification circuitry. As it has an extremely low “ON” resistance and a low supply current, it is often used in battery-driven devices such as portable computers and digital cameras. Additionally, its fast switching characteristics make it suitable for use in high-frequency switching applications.

WORKING PRINCIPLES

The NP55N055SDG-E1-AY is an N-channel MOSFET, which means it has two gate terminals. The gate terminals form an electric field between them, which is controlled by the voltage applied to the gate terminals. When the voltage applied to the gate terminals changes, the electric field changes accordingly, resulting in a change in the transistor’s output voltage. The output voltage of the CMOS is either on or off, depending on the voltage applied to the gate terminals.When the voltage applied to the gate terminals is below a certain threshold, the voltage of the output is off. When the voltage applied to the gate terminals exceeds the threshold, the output voltage is on. This is because the electric field between the gate terminals is strong enough to attract the electrons from the source and drain, thus allowing the current to flow.

CONCLUSION

In conclusion, the NP55N055SDG-E1-AY is a general-purpose N-channel MOSFET with high performance and low power consumption. It is suitable for use in a wide range of applications such as power management, motor control, and signal processing. Its fast switching characteristics make it suitable for use in high-frequency switching applications. It is controlled by the voltage applied to the two gate terminals, and the output voltage is either on or off depending on the applied voltage.

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