
Allicdata Part #: | NP55N055SUG-E1-AY-ND |
Manufacturer Part#: |
NP55N055SUG-E1-AY |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 55V 55A TO-252 |
More Detail: | N-Channel 55V 55A (Tc) 1.2W (Ta), 77W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 (MP-3ZK) |
Mounting Type: | Surface Mount |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 1.2W (Ta), 77W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5250pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 28A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 55A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NP55N055SUG-E1-AY is a single N-channel enhancement-mode MOSFET (metal-oxide-semiconductor field-effect transistor), the main application field of which is low power switch. It is suitable for low voltage, low current and low power range.The working principle of NP55N055SUG-E1-AY is based on the gate control over the channel between two terminals–source and drain. Initially, no current flows between these two terminals as the gate current is zero. When a positive gate voltage is applied, the resistance between the source and drain will decrease, thus establishing a conductive channel which in turn allows current to flow from the source to drain. The current is limited by the gate voltage and the resistance between source and drain. The advantages of this kind of device arehigh-speed switching, low conduction loss, low input capacitance and low power consumption, which make NP55N055SUG-E1-AY suitable for many different applications. It is specially designed for low power switch circuits and ideal for low power dissipating in power supplies and LED driving circuits, as well as applications in communication and computer equipment, such as optical fiber communication, USB applications, computer peripheral, etc.NP55N055SUG-E1-AY is also used in other circuits requiring low-power switch, such as SCR drive, LCD TV and tablet, computer monitor, and some other products. In some cases, it can also be used in power conversion such as power factor control, frequency conversion, DC-DC conversion and AC-DC conversion, etc.The features and benefits of NP55N055SUG-E1-AY include low on-state resistance, small package, fast switching speed, low capacitance, low output noise and high volumetric efficiency. With these advantages, it is widely used in the industrial, medical, automotive and consumer markets.In terms of the physical design, NP55N055SUG-E1-AY is built in an advanced semiconductor process that supplies high reliability and long-term performance. It is also designed with a robust package design to ensure good solder joint performance, reliable contact connection and efficient heat dissipation.To summarise, NP55N055SUG-E1-AY is a single N-channel enhancement-mode MOSFET which is suitable for low power switch and is applicable in many different fields. It features low on-state resistance, small and robust package design, fast switching speed, low capacitance, and low output noise. All these features make this device highly popular and widely used in the industrial, medical, automotive and consumer markets.
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