| Allicdata Part #: | NP82N04PDG-E1-AY-ND |
| Manufacturer Part#: |
NP82N04PDG-E1-AY |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 40V 82A TO-263 |
| More Detail: | N-Channel 40V 82A (Tc) 1.8W (Ta), 143W (Tc) Surfac... |
| DataSheet: |  NP82N04PDG-E1-AY Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 175°C (TJ) |
| Power Dissipation (Max): | 1.8W (Ta), 143W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 9000pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 41A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 82A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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NP82N04PDG-E1-AY is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), which is a single-gate type. MOSFETs are commonly used in electronic circuits ranging from consumer electronics to a wide range of applications in various industries. NP82N04PDG-E1-AY is designed for use in a variety of applications such as power supplies, power amplifiers, switching circuits and instrumentation amplifiers, all of which require highly reliable switching and/or amplification.
The working principle of the NP82N04PDG-E1-AY MOSFET is based on the principle of a field-effect transistor. When the gate voltage is increased, the gate-source voltage of the MOSFET increases, increasing the current flow. This type of transistor can be used as a switch by utilizing the transistor’s ability to control the current flow, which can significantly reduce the power loss caused by excessive current.
The NP82N04PDG-E1-AY MOSFET has a variety of applications, such as in power supplies, where the device can be used for switching, for example for controlling the supply voltage. It can also be used in power amplifiers, where it can control the transfer of power from the source to the load, thus allowing for efficient power management. Additionally, the NP82N04PDG-E1-AY MOSFET can be used in switching circuits to enable the continuous operation of the circuit in order to reduce power consumption. Finally, it can be used in instrumentation amplifiers to provide various levels of voltage amplification for precision measurement.
In conclusion, the NP82N04PDG-E1-AY MOSFET is a single-gate type MOSFET that is designed for use in a variety of applications, including power supplies, power amplifiers, switching circuits and instrumentation amplifiers. The working principle of the device is based on the field-effect transistor, which enables it to switch and/or amplify current with high reliability. This type of transistor is perfect for applications that require efficient power management, as well as for precise measurement.
The specific data is subject to PDF, and the above content is for reference
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