NP82N055PUG-E1-AY Discrete Semiconductor Products

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NP82N055PUG-E1-AY is a single-channel N-channel low conducting mode power MOSFET. It is widely used in power management in consumer electronics, automotive and industrial applications.

The NP82N055PUG-E1-AY is a single MOSFET device that combines excellent low on-resistance, low gate charge and fast switching speed. It is designed specifically for use in power management applications. With its robust design, it can withstand high surge voltage and current, making it suitable for automotive and industrial applications.

The NP82N055PUG-E1-AY has a drain to source voltage rating of 55 V, a drain current rating of 75 A, an on-resistance of 3.2 Ω, and a maximum gate charge of 34 nC. It also features a low gate-drain capacitance of 16.7 pF, a high transconductance of 58 S, a fast switching speed of 500 ns, and an operating temperature range from -55°C to 175°C.

The working principle behind the NP82N055PUG-E1-AY is based on the use of a metal–oxide–semiconductor field-effect transistor (MOSFET). MOSFETs are three-terminal semiconductor devices with a metal gate, an oxide layer, and a semiconductor substrate. When a voltage is applied to the gate, it creates an electric field across the oxide layer, which modulates the flow of current between the source and drain terminals. This flow of current is controlled by the voltage applied to the gate, thus allowing it to be used as a switch or amplifier.

The NP82N055PUG-E1-AY is a versatile device that can be used in a wide range of power supply applications. It can be used for voltage regulation, for on/off switching, for power factor correction and for DC-DC conversion. It can also be used for controlling inductive loads, such as solenoids, motors, and transformers. The device is ideal for applications where low cost and low on-resistance are necessary.

In summary, the NP82N055PUG-E1-AY is a single-channel N-channel low conducting mode power MOSFET designed specifically for use in power management applications. It combines excellent low resistance, low gate charge and fast switching speed, making it suitable for automotive and industrial applications. Its working principle is based on the use of a metal–oxide–semiconductor field-effect transistor, allowing it to be used as a switch or amplifier for a wide range of power supply applications.

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