NP83P04PDG-E1-AY Allicdata Electronics

NP83P04PDG-E1-AY Discrete Semiconductor Products

Allicdata Part #:

NP83P04PDG-E1-AYCT-ND

Manufacturer Part#:

NP83P04PDG-E1-AY

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET P-CH 40V 83A TO-263
More Detail: P-Channel 40V 83A (Tc) 1.8W (Ta), 150W (Tc) Surfac...
DataSheet: NP83P04PDG-E1-AY datasheetNP83P04PDG-E1-AY Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 1.8W (Ta), 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9820pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 41.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT) 
Description

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The NP83P04PDG-E1-AY is a part of a product range of single P-Channel Enhancement Mode Field Effect Transistors (FETs) available in the market today. These transistors are designed for high speed switching and low level analog signal applications and are primarily used in mobile communication products.

This type of FET has a minimum drain-source on-state resistance of 4Ω and maximum drain-source on-state resistance of 9Ω. It has a typical temperature coefficient of -2.5 V/°C, a very low gate charge, and a low threshold voltage. The device comes in a surface mount package size SO-8.

The transistors are designed to work by detecting and controlling voltage levels with the positive voltage applied at the gate. When the voltage reaches the threshold level, the transistor is switched on. The drain current flows from the source to the drain, and the controlling gate voltage is applied over the source.

The NP83P04PDG-E1-AY application fields are in consumer electronics, RF front ends, ultraviolet light detection, portable devices, and metering. The most common use for this type of FET is in voltage regulator circuits where it is used as a switch to turn the circuit on or off. It is also used in analog and digital circuits as a buffer device, as an amplifier, or as a driver. Other applications include switching power supplies, audio amplifiers, and logic gates.

The main component driving the NP83P04PDG-E1-AY is the gate-source voltage. This voltage, typically between 0V-5V, is applied to the gate of the transistor. As the voltage and current passing through the gate of the transistor rises to the threshold level, the FET is “turned on”. The current then flows from the source to the drain, and this is the “on” state of the transistor.

In order to turn the transistor off, the gate-source voltage needs to be reversed. This will reverse the current flow, effectively “turning off” the transistor. The transistor will remain in this “off” state until the gate-source voltage is again reversed, thus allowing the current to flow from source to drain and turning the FET “on”.

In conclusion, the NP83P04PDG-E1-AY is a P-Channel Enhancement Mode FET designed for high speed switching and low level analog signal applications. It is mainly used in voltage regulator circuits and as a switch in audio amplifiers, logic gates, and other circuits. The device is controlled by the gate-source voltage, and when this voltage reaches a certain threshold, the current will flow from source to drain.

The specific data is subject to PDF, and the above content is for reference

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