NP83P06PDG-E1-AY Discrete Semiconductor Products |
|
| Allicdata Part #: | NP83P06PDG-E1-AYTR-ND |
| Manufacturer Part#: |
NP83P06PDG-E1-AY |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET P-CH 60V 83A TO-263 |
| More Detail: | P-Channel 60V 83A (Tc) 1.8W (Ta), 150W (Tc) Surfac... |
| DataSheet: |  NP83P06PDG-E1-AY Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 175°C (TJ) |
| Power Dissipation (Max): | 1.8W (Ta), 150W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 10100pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 190nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 8.8 mOhm @ 41.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 83A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NP83P06PDG-E1-AY is a Single N-Channel MOSFET that can be used in a variety of different applications. This MOSFET is an ideal choice for efficiency, performance, and cost. The NP83P06PDG-E1-AY is a vertical D-MOS technology gate that provides low gate charge, ultra-low Rds(on), fast switching speed and high-side load capability. This MOSFET has a maximum allow current of 110 A and a maximum peak drain-source voltage of 80 V. It also has a maximum operating temperature of 150°C.
The typical usage of an NP83P06PDG-E1-AY is in applications requiring high efficiency and low power losses, such as computers, gaming and communication circuits. In addition, it is can be used as an efficient power switch that can replace traditional transistors and relays in various applications. It is most commonly used to switch loads with high reliability and long lifetime.
The working principle of the NP83P06PDG-E1-AY MOSFET is based on the MOSFET’s drain-source voltage, VDS. When a voltage is applied to the Gate, the device is activated, allowing current flow from the drain to the source. The more voltage applied to the Gate, the more current that can flow from the Drain to the Source. For example, when a voltage of 5 V is applied to the Gate, the maximum current flowing from the Drain to the Source is 110 A. This current will be reduced as the voltage is lowered.
In comparison to many other transistors, the NP83P06PDG-E1-AY MOSFET has a relatively low gate-to-drain capacitance, making it suitable for high-frequency applications. It also has very high input impedance, meaning it can accurately sense small changes in voltage, making it a good choice for switching and logic applications. Because of its low on-state resistance, it is also suitable for high-power applications.
In addition, the NP83P06PDG-E1-AY has a high-side load capability. This means that the device can drive a load of up to 80 V, with a current of up to 110 A, even when the load is on the same side of the signal as the device. This makes it a great choice for applications that require a high-side load, such as motor control and power management circuits.
The NP83P06PDG-E1-AY MOSFET is a high-performance device that is suitable for a wide variety of applications. Its features make it an ideal choice for power management, motor control, and switching applications. With its low gate-to-drain capacitance, high input impedance and low on-state resistance, it is suitable for a range of high-speed, high-power and logic applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| NP83P04PDG-E1-AY | Renesas Elec... | 0.0 $ | 1000 | MOSFET P-CH 40V 83A TO-26... |
| NP83P06PDG-E1-AY | Renesas Elec... | 0.0 $ | 1000 | MOSFET P-CH 60V 83A TO-26... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...