NSV40200LT1G Discrete Semiconductor Products

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The NSV40200LT1G is a NPN epitaxial silicon transistor manufactured by STMicroelectronics. It is a single n-channel field effect transistor, commonly referred to as an enhancement mode FET, with a maximum drain-source breakdown voltage of 200 V and a continuous drain current of 20 Amperes (A). It is designed for use in various applications such as power supplies, DC motors, amplifiers and high voltage switching. This article explores the application field and working principle of the NSV40200LT1G.

The NSV40200LT1G is a general purpose FET that can be used in a variety of applications. It is used in power supplies and amplifiers to switch and regulate high voltage outputs, as well as in DC motors to control speed and torque. It is also widely used in industrial automation and robotics to control valves, actuators, conveyors and other equipment. It can also be used in electronic circuits that require high voltage switching.

The NSV40200LT1G is an enhancement mode FET, meaning it does not require a voltage source to turn it on. When the gate voltage is below the threshold voltage (V_GS < V_TH), the body-drain junction is “enhanced”, allowing current to flow. This process is known as “self-enhancement”. The NSV40200LT1G also has a very low R_DS on resistance (Drain-Source on Resistance) of 0.19 Ω, making it ideal for high current applications.

The NSV40200LT1G is a standard NPN transistor, meaning it has three terminals, the emitter (E), the collector (C) and the base (B). When the gate voltage is below the threshold voltage, the transistor is “on” and current can flow between the emitter and collector. When the gate voltage is above the threshold voltage, the transistor is “off” and no current can flow between the emitter and collector. The control of the current flow is dependent on the base-emitter junction, which is operated by controlling the voltage applied to the base pin. When the voltage applied to the base pin is increased, current will flow from the emitter to the collector; and when the voltage is decreased, current will stop flowing between the emitter and collector and the transistor will be “off”.

The NSV40200LT1G is typically used in high current applications due to its low R_DS on resistance. However, it is important to note that the device is rated for a maximum continuous drain current of 20 A. If more current is needed, it is recommended to use additional devices in parallel. Additionally, it is important to ensure that the power dissipation of the device does not exceed the maximum dissipation rating of the device to avoid any damage from overheating.

In summary, the NSV40200LT1G is a single n-channel enhancement mode FET with a maximum drain-source breakdown voltage of 200 V and a continuous drain current of 20 A. It is designed for use in various applications such as power supplies, DC motors, amplifiers and high voltage switching. The device operates by self-enhancement, meaning that it does not require a voltage source to turn it on. It is rated for a maximum continuous drain current of 20 A and has a very low R_DS on resistance of 0.19 Ω, making it ideal for high current applications. It is important to ensure that the power dissipation of the device does not exceed the maximum dissipation rating to avoid any damage from overheating.

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