Allicdata Part #: | NSV40501UW3T2G-ND |
Manufacturer Part#: |
NSV40501UW3T2G |
Price: | $ 0.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 5A 3WDFN |
More Detail: | Bipolar (BJT) Transistor NPN 40V 5A 150MHz 875mW S... |
DataSheet: | NSV40501UW3T2G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.23212 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 400mA, 4A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2A, 2V |
Power - Max: | 875mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-WDFN Exposed Pad |
Supplier Device Package: | 3-WDFN (2x2) |
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Transistors are the essence of logic processing and are ubiquitous in modern electronics. One type of transistor is a bipolar junction transistor (BJT), which is a three-terminal semiconductor device that amplifies and switches electrical signals. The NSV40501UW3T2G is a specific BJT model and is used in a variety of applications.
The NSV40501UW3T2G is a PNP bipolar transistor in a TO-220AB package with a maximum case temperature of 150°C and an average junction temperature of 150°C. It has a collector-emitter saturation voltage of 1 V (maximum) at 75 mA and an emitter base voltage of 5.5 V (maximum). Additionally, it has a high collector current of 4 A (maximum) and a low collector-emitter saturation voltage of 500 mV (maximum) at a collector current of 2.0 A. Moreover, its monolithic power transistor has a high voltage of 40 V (maximum) and a low total power dissipation of 0.12 W (typical).
The NSV40501UW3T2G can be used for a variety of applications, such as motor control, DC/DC conversion, power supplies, and audio amplifiers. With its low saturation voltage, fast switching speed, and large current capabilities, the NSV40501UW3T2G is well suited for applications that require high efficiency and large currents. It is also used in low voltage power control applications, such as dimmers and pulse-width modulation control.
The working principle of the NSV40501UW3T2G is that of a PN junction between two semiconductor materials, either a P-type and N-type conductivity or an N-type and P-type conductivity. Its PN junction utilizes a voltage drop across the PN junction that forms a barrier between the two materials and resists current flow. This voltage drop causes current to flow in one direction, known as the collector-emitter current, and causes voltage to be amplified. Additionally, when the base-emitter voltage reaches a certain level known as the emitter cutoff voltage, the PN junction is closed and the current stops flowing, thus turning the NSV40501UW3T2G off.
The NSV40501UW3T2G is a versatile and reliable component that is used in a variety of applications, such as motor control, DC/DC conversion, power supplies, and audio amplifiers. Its PN junction and voltage drop technology allows for fast switching, high efficiency, and large currents, making it ideal for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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