Allicdata Part #: | NSV40301MDR2G-ND |
Manufacturer Part#: |
NSV40301MDR2G |
Price: | $ 0.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN 40V 3A 8SOIC |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 3A... |
DataSheet: | NSV40301MDR2G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.21169 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 115mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 2A, 2V |
Power - Max: | 653mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
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The NSV40301MDR2G is a product family of bipolar, NPN double Darlington arrays, made from bipolar junction transistors (BJT). This 8 pin product has two integrated, matched NPN Darlington arrays that offer excellent frequency performance, adjustable current limit and fast turn-off. When combined with excellent hFE (current gain) and low output capacitance, this makes for an ideal choice for battery-powered consumer applications.
The NSV40301MDR2G includes current limit and thermal shutdown protection which makes it suitable for use in automotive and portable applications where circuit protection is essential. With a guaranteed 400 mA peak each channel, the device can drive up to 2 A per channel while only consuming 30 mA of supply current.
The NSV40301MDR2G is primarily designed to provide circuits with low side switching capability. This product is suitable for applications such as switching power in consumer devices like mini televisions, projection TVs, alarm and security systems and medical devices.
This device is also useful in automotive applications such as switch logic encoder inputs and on/off switching for turn signals.
The NSV40301MDR2G is based on NPN double darlington technology, which consists of two darlington transistors connected in a common emitter configuration. This configuration enables linear control of the base current and provides a high breakdown voltage, which is suitable for a wide range of photosensitive applications. The device offers excellent current capability, with up to 2A per channel.
The common base and emitter voltage of the Darlington transistor allows it to be used as a current regulator. When a fixed current is drawn by the Darlington transistor, the output voltage remains fixed, which is ideal for power regulator applications. The current gain (hFE) of each Darlington transistor is controlled by the base current.
The NSV40301MDR2G also features adjustable current limit and thermal shutdown protection. The current limit relies on the Darlington transistors operating at the point where the two current gain devices cross-over. This, together with the low capacitance of the device, makes the NSV40301MDR2G ideal for applications requiring low side switching.
The devices also incorporate an adjustable thermal shutdown circuit which will limit any dangerous overheating of the devices. This feature will also reduce the burden on equipment designers, who no longer need to provide thermal protection for the device.
The NSV40301MDR2G is an ideal solution for applications requiring low side switching and excellent frequency performance. The adjustable current limit and thermal shutdown ensure that the device is safe and reliable in large numbers of applications. It is suitable for a wide range of battery-powered consumer applications and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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