NSV40301MZ4T1G Discrete Semiconductor Products |
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Allicdata Part #: | NSV40301MZ4T1GOSTR-ND |
Manufacturer Part#: |
NSV40301MZ4T1G |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 3A SOT223-4 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 3A 215MHz 800mW S... |
DataSheet: | NSV40301MZ4T1G Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.17929 |
2000 +: | $ 0.16248 |
5000 +: | $ 0.15128 |
10000 +: | $ 0.14941 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 300mA, 3A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 1A, 1V |
Power - Max: | 800mW |
Frequency - Transition: | 215MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | NSS40301 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NSV40301MZ4T1G is a small signal, NPN, low voltage transistor with a low collector - emitter saturation voltage. It belongs to the Transistors - Bipolar (BJT) - Single family. The device is most notably used in amplifiers, switching circuits, and regulation applications. In general, the NSV40301MZ4T1G is versatile, meaning it can be tailored to suit the particular requirements of a wide variety of applications.
This particular transistor is capable of providing good current gain and a wide range of operating voltages. It is well suited for low - to - medium power audio amplifiers, small servo and logic circuits, and even switching power supplies. Additionally, it can be used in class A and B amplifiers, making it one of the preferred choices for many industrial and audio applications. Given its low voltage offset and good temperature stability, it is also suitable for regulating applications, such as current and voltage sources.
The main feature of this transistor is its low collector - emitter saturation voltage. This voltage indicates how much the base - emitter voltage needs to increase before the base - collector current is saturated. The lower the collector - emitter saturation voltage, the more accurately voltages and currents can be regulated. As the collector - emitter saturation voltage is lower, the performance of the transistor is improved, making it a great choice for regulating applications.
The working principle behind the NSV40301MZ4T1G is based on the principle of a current mirror. This principle is employed in various analog, digital and other types of circuits and is largely used as a substitute for precise fixed biasing. It is a configuration of transistors coupled together with their collector current being maintained to mirror each other. This is an important element in today\'s transistor circuits, as it avoids the need for external biasing and makes fine adjustments easier. By mirroring the collector current of two transistors, slight variations in the circuit conditions are compensated for, thus allowing for improved accuracy and performance in the management of current and voltage sources.
To sum up, the NSV40301MZ4T1G is a versatile transistor and can be utilized in many different applications, such as amplifiers, switching circuits, and regulating circuits. Its main advantage is its low collector - emitter saturation voltage, which allows for improved accuracy, stability and performance in regulating applications. Additionally, its working principle is based on the current mirror principle, which provides the benefit of precise biasing without the need for additional components.
The specific data is subject to PDF, and the above content is for reference
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