NSV40200UW6T1G Allicdata Electronics
Allicdata Part #:

NSV40200UW6T1G-ND

Manufacturer Part#:

NSV40200UW6T1G

Price: $ 0.23
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 40V 2A 6WDFN
More Detail: Bipolar (BJT) Transistor PNP 40V 2A 140MHz 875mW S...
DataSheet: NSV40200UW6T1G datasheetNSV40200UW6T1G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.21649
Stock 1000Can Ship Immediately
$ 0.23
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Power - Max: 875mW
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NSV40200UW6T1G is a bipolar junction transistor (BJT) specifically designed for modern electronics. It is a single transistor device that is offeres a large range of benefits, such as increasing power efficiency and reducing the size of the overall device. It is designed to operate in harsh environments, making it ideal for applications in the automotive, industrial and medical industries.

The NSV40200UW6T1G is a PNP transistor with a maximum power dissipation of 4W and a high forward voltage drop of 5V. The device features an integrated gate-source protection diode that helps protect against short circuits and overvoltage operations. The device also features an integrated gate current limiting feature that reduces the peak gate voltage to improve reliability.

The NSV40200UW6T1G is a general purpose BJT device used in a variety of applications, such as power supplies, converters, amplifiers and switching circuits. It is commonly used to switch high-current applications and can be used as a DC-DC converter in both step-up and step-down configurations. The NSV40200UW6T1G is also used as a switching device in power electronics to control both AC and DC power in passive-load switches.

The working principle of the NSV40200UW6T1G is simple; it acts as a switch between the input voltage and the output voltage. When the base voltage is higher than the gate voltage, the transistor is in an on state and the current flows through it. When the base voltage is lower than the gate voltage, the transistor is in an off state and no current flows.

The NSV40200UW6T1G is a robust and reliable device, making it an excellent choice for a variety of applications in the automotive, industrial and medical industries. It offers high power efficiency and a reliable on/off switch for power electronics. With its integrated gate-source diode and current limiting feature, it helps reduce the potential for short circuits, further improving its reliability.

The specific data is subject to PDF, and the above content is for reference

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