Allicdata Part #: | NSV40300MDR2G-ND |
Manufacturer Part#: |
NSV40300MDR2G |
Price: | $ 0.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP 40V 3A 8SOIC |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A... |
DataSheet: | NSV40300MDR2G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.21169 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 170mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 1A, 2V |
Power - Max: | 653mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
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The NSV40300MDR2G belongs to the category of Transistors - Bipolar (BJT) - Arrays, and is a highly advantageous device for electronic applications. This array features a stackable flat-pack that provides optimized performance with a greater number of Bipolar Junction Transistors (BJTs). It is specifically designed for use in digital and analog applications, such as signal processing, audio and video, and general purpose circuit functions.
The physical configuration of a typical NSV40300MDR2G consists of multiple BJTs placed in an array. The array consists of one or more BJTs connected in series and/or parallel. The combination of BJTs allows for increased capability, performance, and scalability. These arrays offer great flexibility, allowing for higher levels of current gain without adding additional components. Also, due to their miniaturized size, and small internal footprints, the use of multiple BJTs can help to save board space, adding a significant savings of cost.
The working principle of the NSV40300MDR2G is based on current amplification. The array uses an input signal, which is amplified by the BJTs. This amplified current then passes through the array, supplying power to the load. The output current is varied by adjusting the applied input signal’s level, or by means of variable voltage bias. This type of amplifier offers numerous advantages, since it does not require feedback circuitry, or additional components such as transformers or resistors.
The application fields of the NSV40300MDR2G can vary widely. These arrays are predominantly used in telecommunications and audio/video applications, particularly in high speed serial communications. Multiplexers, KVM switches, and voice over internet protocol (VoIP) applications are all excellent areas of use for this array. Additionally, the NSV40300MDR2G can be applied in consumer electronics, such as cable and satellite receivers, game consoles, and audio-video receivers.
The NSV40300MDR2G array offers many advantages over traditional single BJT designs. These arrays are much less expensive to purchase, and require fewer components to assemble. Additionally, their small size and weight allows for their use in tight spaces, making them highly desirable for many digital systems. They also offer a greater degree of current gain, thanks to their use of multiple BJTs, and can provide the power needed for many digital applications.
To summarize, the NSV40300MDR2G belongs to the category of Transistors – Bipolar (BJT) – Arrays. It is ideal for applications in telecommunications, audio/video, and consumer electronics due to its optimized performance, lower cost, and high degree of current gain. It uses an input signal to be amplified by the array’s BJTs, and the output current is varied through the adjustment of the applied signals’ level. This type of amplifier offers several advantages over its single BJT counterparts, including a greater degree of current gain, a lower cost of acquisition, and the ability to be used in tight spaces.
The specific data is subject to PDF, and the above content is for reference
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TRANS NPN/PNP 45V 0.1A 6DFNBipolar (BJT)...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...