NTB4302G

NTB4302G is a power metal–oxide–semiconductor field-effect transistor (MOSFET) designed in a D-PAK package. It is an enhancement-mode power MOSFET with low on-state resistance and low gate-charge. NTB4302G can be used for various operations requiring high performance and reliability.

Application Field

NTB4302G can be used for various operations in a wide range of application fields. It is ideal for voltage regulation, and can be used in battery systems, AC/DC converters and off-line power supplies for lighting, toys, and the electrical industry. NTB4302G also provides a low on-state resistance and low gate-charge, making it suitable for synchronous rectification, or PFC/OFF-LINER circuits.

NTB4302G can also be used in motor and LED control, as well as commercial and industrial systems, providing reliable power and maximum performance. Additionally, it may be employed in power circuits in the automotive industry, such as those used in EDIs, or exhaust gas recirculation valves.

Working Principle

NTB4302G works by providing a low barrier for charge carriers between the source and drain electrodes. This increases the conduction of electrons, thus providing a current path. The on-state resistance of NTB4302G is 99 mΩ max. for output at 25V and 7.5 A.

The MOSFET is comprised of three functional regions: the source, the gate and the drain. An electric field is created when a gate-source voltage, VGS, is applied across the gate-source junction. This electric field creates a depletion region, decreasing the resistance of the semiconductor channel. This changes the resistance between source and drain, allowing a current to flow.

Only a small voltage is applied to the gate in order to control the MOSFET. NTB4302G works on an enhancement-mode principle, where the conductivity of the transistor increases as the gate-source voltage is increased. This is referred to as “body effect”, since the gate voltage affects the resistance between the source and drain.

NTB4302G also has a low gate-charge, making it suitable for high-frequency switching applications. It features a low intrinsic capacitance between the drain and gate, providing fast dynamic performance. Additionally, the dielectric strength between gate and source is high, making NTB4302G suitable for applications with a high input voltage.

NTB4302G is designed using submicron semiconductor device technologies, ensuring fast switching speeds and low on-state resistance. Additionally, an avalanche rating of 25V ABS makes it suitable for high-reliability applications.

In conclusion, NTB4302G is a powerful and reliable power MOSFET designed for various operations in a wide range of application fields. Its low on-state resistance, low gate-charge, high breakdown voltage and fast switching speeds provide enhanced performance. Additionally, NTB4302G is suitable for applications in the electrical and automotive industries.