NTB45N06LT4 Allicdata Electronics
Allicdata Part #:

NTB45N06LT4OS-ND

Manufacturer Part#:

NTB45N06LT4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 45A D2PAK
More Detail: N-Channel 60V 45A (Ta) 2.4W (Ta), 125W (Tj) Surfac...
DataSheet: NTB45N06LT4 datasheetNTB45N06LT4 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 125W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 28 mOhm @ 22.5A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NTB45N06LT4 is a power CMOS N-Channel enhancement type metal oxide semiconductor field-effect transistor (MOSFET). It is designed specifically to be an efficient, reliable, and economical power switching device to provide greater power control in a variety of applications. Specifically, the NTB45N06LT4 has various current flow, temperature, and voltage rating to ensure it can be used in a variety of different applications.

The NTB45N06LT4 is an enhancement type, N-channel MOSFET. The N stands for the type of passivation layer that it uses, which is composed of either polysilicon nitride or polycrystalline silicon. The N-channel refers to the type of electrical characteristic that the transistor has, in that current flows from the source to the drain when a negative gate voltage is applied. When the gate voltage reaches the threshold voltage (Vt) of the NTB45N06LT4, then the current that is allowed to pass through increases.

The purpose of the NTB45N06LT4 is to act as a power switch in various electrical and electronic applications. It can be used to route power to different components, and can also be used as a switch to turn off and on various circuits. The NTB45N06LT4 is designed specifically to be both efficient and economical in a wide range of applications. The NTB45N06LT4 is designed to be able to handle high currents up to 45A and a breakdown voltage of 60V. It also has a fast switching speed, low gate-threshold voltage, and low on-resistance. All of these features make the NTB45N06LT4 suitable for a variety of applications.

The NTB45N06LT4 is used in a variety of applications, including power supplies, DC-DC converters, motor control, and uninterruptible power supplies (UPS). In power supplies, it is often used as a switch to control the flow of current between the power source and the load. In DC-DC converters, the NTB45N06LT4 can be used in switching or buck-boost topologies to step up or down the input voltage. In motor control applications, the NTB45N06LT4 can be used as a switch to control the rotation speed of the motor. Lastly, in uninterruptible power supplies, it can be used as a switch to transfer between sources of power.

The working principle of the NTB45N06LT4 is fairly simple. As mentioned previously, it is an enhancement type MOSFET, meaning that it requires a negative gate voltage to allow current to pass through. When the gate voltage reaches the threshold voltage (Vt) of the transistor, the channel is opened and current flows from the source to the drain. As the gate voltage increases, the channel is opened more and more, allowing more current through.

The other property of the NTB45N06LT4 is that it is constructed using either polysilicon nitride or polycrystalline silicon. This is important because these materials are generally not affected by heat or voltage, making the NTB45N06LT4 a stable and reliable switching device.

In conclusion, the NTB45N06LT4 is a great choice for a variety of applications that require power switching. It has excellent parameters such as low gate-threshold voltage, low on-resistance, and fast switching speed. It is constructed using durable materials, making it reliable and long-lasting. The NTB45N06LT4 is an enhancement type MOSFET, and it requires a negative gate voltage to allow current to pass through. With its many advantages, it is no wonder that the NTB45N06LT4 is a popular choice for power switching applications.

The specific data is subject to PDF, and the above content is for reference

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