NTB85N03 Allicdata Electronics
Allicdata Part #:

NTB85N03-ND

Manufacturer Part#:

NTB85N03

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 28V 85A D2PAK
More Detail: N-Channel 28V 85A (Tc) 80W (Tc) Surface Mount D2PA...
DataSheet: NTB85N03 datasheetNTB85N03 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 80W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 24V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drain to Source Voltage (Vdss): 28V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The NTB85N03 MOSFET is a type of insulated gate transistor utilized in a wide array of applications. The NTB85N03 is most frequently used for high-amperage power switching in low voltage applications. Being a n-channel MOSFET, the NTB85N03 has excellent resistance to reverse operation and a high yield reliability. As an insulated gate transistor, the NTB85N03 is able to handle higher currents effectively while utilizing less power.

The NTB85N03 is a single transistor device in which the source and gate are the same layer of metal oxide semiconductor (MOS). This creates an insulated layer of material between the source and the gate. This insulation is what allows the device to handle large currents and high voltages with less loss. This transistor is also capable of handling higher temperatures due to its efficient design.

The working principle of the NTB85N03 can be broken down into four distinct and critical stages. First, the source voltage is converted into a current through the MOSFET\'s source terminal. Next, the current is passed through the MOSFET\'s drain terminal and the resistance to the flow of current through the drain are checked by the gate terminal. Third, the amount of current that passes through the MOSFET is determined based on the voltage applied at the gate terminal. Finally, the current is regulated and an amplified signal is passed on.

The NTB85N03 can be found in a variety of applications. It is commonly used in DC motor controllers and pulse-width-modulators (PWM). It is also frequently used in HVAC systems, automobile electronics, and other electrical systems that require heavy current. The NTB85N03 is also found in solid-state relays, which are devices used for controlling electric current in a variety of applications. Additionally, the NTB85N03 can be found in robotics, power tools, and various other industrial applications.

When it comes to the NTB85N03, it is clear to see why it is so often chosen for a variety of applications. It is an extremely efficient transistor, capable of handling higher currents while utilizing less power. Its insulated gate design provides excellent protection against reverse operations and high temperatures, making it a very reliable device. Its working principle is also extremely straightforward and simple. With these qualifications, it is easy to see why the NTB85N03 is the go-to choice for many power switching applications.

The specific data is subject to PDF, and the above content is for reference

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