| Allicdata Part #: | NTB85N03T4GOS-ND |
| Manufacturer Part#: |
NTB85N03T4G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 28V 85A D2PAK |
| More Detail: | N-Channel 28V 85A (Tc) 80W (Tc) Surface Mount D2PA... |
| DataSheet: |  NTB85N03T4G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 80W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 24V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 6.8 mOhm @ 40A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 85A (Tc) |
| Drain to Source Voltage (Vdss): | 28V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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NTB85N03T4G is a high power N-channel enhancement-mode vertical DMOS field-effect transistor (FET). It is available in a TO-220 PowerPAK package and is characterized by easy control, low on-state resistance, fast switching speed and low gate charge.
It can be used in a wide range of applications such as power switches, motor controls, load switching, motor and relay drivers, lamp and LED drivers, power supply control and inrush current limiting. It is also used in battery charging and high side switching. It has a wide array of features such as reverse drain,gate and body protection, overload protection and over temperature protection.
The working principle of the NTB85N03T4G is fairly simple. It consists of two metal oxide semiconductor field-effect transistors (MOSFETs) in an integrated circuit. The MOSFETs have separate gates and they are separated by a dielectric layer. The gate of one MOSFET is connected to the source of the other MOSFET and this forms the "channel" between them. When a voltage is applied to the gate of one of the MOSFETs, a conductive channel or "path" is created and current is allowed to flow through the channel, thus turning it on. When the voltage is removed, the channel closes and the current stops flowing, thus turning it off.
NTB85N03T4G can work with a drain-source voltage (Vds) of up to 55V, making it suitable for high-voltage applications. It has an on resistance (Rds(on)) of 3 ohms and maximum drain-source current rating (Id) of 85A. It has a low gate charge (Qg) of 45nC and a very low reverse leakage current (Idr).
NTB85N03T4G is a powerful and versatile device that can be used in a wide range of applications. Its low on-resistance and fast switching time make it ideal for applications requiring high performance and efficiency. It is also a robust device, with reverse drain,gate and body protection, over temperature protection and overload protection.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| NTB85N03T4G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 28V 85A D2PAK... |
| NTB85N03T4 | ON Semicondu... | -- | 1000 | MOSFET N-CH 28V 85A D2PAK... |
| NTB85N03 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 28V 85A D2PAK... |
| NTB85N03G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 28V 85A D2PAK... |
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