Allicdata Part #: | NTB90N02G-ND |
Manufacturer Part#: |
NTB90N02G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 24V 90A D2PAK |
More Detail: | N-Channel 24V 90A (Ta) 85W (Tc) Surface Mount D2PA... |
DataSheet: | NTB90N02G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2120pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5.8 mOhm @ 90A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Ta) |
Drain to Source Voltage (Vdss): | 24V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTB90N02G is an enhancement-mode high-speed MOSFET of N-channel type, which belongs to the family of Field Effect Transistors (FETs). This component is manufactured by Renesas Electronics Corporation, a Japanese Semiconductor Company.
Due to its wide range of features and applications, NTB90N02G is widely used in various switching applications in many industries. The component has a small package size and low on-state resistance. It also has a low gate charge and a fast switching performance.
The NTB90N02G is an ideal component for use in power electronic circuits, power switching devices, load switching circuits, and motor control applications. The component can also be used in H-bridge circuits, motor drivers, and motor control systems. The component has a maximum operating temperature of 175°C, which makes it suitable for high temperature applications.
The NTB90N02G has a low-current threshold voltage and low on-resistance. It also features an optimized structure which results in superior switching performance. The component has a maximum drain-source voltage of 90VDC and a maximum continuous drain current of 98A. The component also has a maximum power dissipation of 150W with an associated thermal resistance of 6m°C/W.
The principle of operation of the NTB90N02G is based on majority carrier injection mechanism. It is a type of transistor which uses both electron-beam and hole injection to control the flow of electric charge. The component uses a gate voltage to inject electrons or holes into the substrate material. The electrons or holes are then passed through the substrate material to activate the power MOSFET.
The NTB90N02G is designed to offer superior performance in applications requiring high power switching. It is used in order to switch on and off a wide range of loads, such as motors, transformers, lamps, H-bridges, and heating elements. The component also can be used for rectifying AC line voltage or for controlling current in power electronic circuits.
The NTB90N02G is a reliable and commonly used component for switching applications. It offers superior performance due to its features such as low on-state resistance, fast switching performance, and low-power dissipation. These features make the NTB90N02G a valuable component in many applications, including power switching, motor control applications, rectifying AC line voltage, and controlling current in power electronic circuits.
The specific data is subject to PDF, and the above content is for reference
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