NTB90N02T4 Allicdata Electronics
Allicdata Part #:

NTB90N02T4OSTR-ND

Manufacturer Part#:

NTB90N02T4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 24V 90A D2PAK
More Detail: N-Channel 24V 90A (Ta) 85W (Tc) Surface Mount D2PA...
DataSheet: NTB90N02T4 datasheetNTB90N02T4 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 85W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 90A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Drain to Source Voltage (Vdss): 24V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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NTB90N02T4, also known as N-Channel MOSFET, is a type of transistor that is used for controlling and switching electronic signals. The NTB90N02T4 is an integrated, general-purpose MOSFET that has been designed for use in a wide range of applications, including power switches, voltage and current regulation, and digital logic controllers. It is capable of switching and/or amplifying small digital and/or analog signals, and can be used for either switching or amplifying applications. The device also provides excellent protection against transients, high-voltage transients, and electrostatic discharges.

The NTB90N02T4 is a single N-Channel MOSFET, which means that it contains one N-type silicon channel. An N-type silicon channel is the type of channel used in most MOSFETs, and is the most common form of channel used in today’s electronics. This type of channel consists of a gate, source, and drain. The gate is the control electrode and is used to control the flow of current between the source and the drain. The source is the input of the device and is connected to the source voltage, whereas the drain is the output and is connected down to the drain voltage. When an electrical signal is applied to the gate, it will create an electric field which will cause the electrons in the silicon channel to move from the source to the drain. This is what enables the MOSFET to control and switch electronic signals.

The NTB90N02T4 has a variety of applications, ranging from digital logic controllers, to power switches, to voltage and current regulation. It is capable of switching and/or amplifying small digital and/or analog signals, making it a versatile device for any application. It is also most commonly used for low-voltage, low-power applications. Additionally, the NTB90N02T4 has an improved design which allows it to have a very low standby current, making it a great choice for applications that will experience periods of lower power consumption.

In conclusion, the NTB90N02T4 is a single N-Channel MOSFET that is capable of switching and/or amplifying small digital and/or analog signals. It is most commonly used in low-voltage, low-power applications as it has an improved design which allows it to have a very low standby current. The NTB90N02T4 can be used for a wide range of applications, including power switches, voltage and current regulation, and digital logic controllers.

The specific data is subject to PDF, and the above content is for reference

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