NTH027N65S3F-F155

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NTH027N65S3F-F155 is a high-performance discrete MOSFET (also known as insulated-gate field-effect transistor or IGFET) manufactured by ON Semiconductor. It is a single N-Channel Enhancement Mode MOSFET featuring low on-resistance, low gate charge, threshold voltage, and fast switching speed. In short, it can amplify signals and can be used as a switch for various applications.

The NTH027N65S3F-F155 is rated for operation over a temperature range of -55°C to +150°C (Tj), with a maximum power dissipation of 8 Watts, and a drain-source voltage rating of 55V. It has a drain current rating of 27 Amps and a continuous drain current rating of 27A, being suitable and designed for use in high current switching applications. The gate-source voltage rating is +/- 20V.

The device is constructed using advanced high voltage processing technology and is built using a high-performance gallium nitride N-Channel MOSFET housed in the standard TO-220 package. It is suitable for high-power applications due to its fast switching speed and impressive current handling capabilities. It is also notable for its low on-resistance and low gate charge properties, which results in increased efficiency and improved performance.

The NTH027N65S3F-F155 has a variety of applications, including power switching, motor control, solenoid control, and power conversion. Its low on-resistance and fast switching speed makes it ideal for high frequency switching applications. Due to its low gate charge and low input capacitor requirements, it is also suitable for use in buck converter, AC-DC rectifier, and DC-DC converter designs.

The NTH027N65S3F-F155 works by modulating a flow of electrons between two electrodes located within a channel between source and drain, forming an electric field in the channel with the help of the gate terminal. The gate terminal is responsible for controlling the flow of electrons in the channel. When a negative voltage is applied to the gate terminal, it creates an electric field in the channel that is repulsive to electrons, thus restricting the current flow between source and drain. Conversely, when a positive voltage is applied to the gate terminal, it creates an electric field that is attractive to electrons and allows the current to flow freely between source and drain.

In summary, the NTH027N65S3F-F155 is a high-performance single N-Channel Enhancement Mode MOSFET manufactured by ON Semiconductor. It is rated for operation over a temperature range of -55°C to +150°C (Tj), offers improved performance due to its low on-resistance, low gate charge, and fast switching speed, and is suitable for a wide range of high-power applications such as power switching, motor control, solenoid control, and power conversion. It works by modulating a flow of electrons between two electrodes located within a channel between source and drain, with the gate terminal controlling the flow of electrons in the channel.

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