NTH027N65S3F_F155

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The NTH027N65S3F_F155 is a 65V N-channel TrenchMOS FET transistor with a low on-state resistance of 0.026ohm. Offered in a TO-220F package, this device is suitable for use in a wide range of applications, including PFC, high-frequency power conversion and home appliance circuits. This article will explore the NTH027N65S3F_F155 application field and working principle.

NTH027N65S3F_F155 Application Field

The NTH027N65S3F_F155 is a powerful transistor used mainly in power conversion, PFC, and high-frequency circuits. It can be used for power switching in a variety of applications, including laptops, servers, telecom equipment, home appliances and automotive systems.

The NTH027N65S3F_F155 can be used in DC-DC converters, AC-DC converters, high-frequency DC-DC converters, high-frequency AC-DC converters, DC-AC converters, AC-AC converters, and other high-frequency switching applications.

The NTH027N65S3F_F155 is suited for most standard applications requiring a high-voltage switch with low on-state resistance and low gate charge. It features a low gate-source threshold voltage, enabling it to switch at a low voltage and current. This makes it well-suited for medium- and high-power applications where effective heat dissipation and switching efficiencies are essential.

NTH027N65S3F_F155 Working Principle

The NTH027N65S3F_F155 is a 65V N-channel TrenchMOS FET transistor. TrenchMOS FETs are transistors with a narrow vertical structure in their channel, allowing them to achieve low on-state resistance, high switching speeds and good thermal properties. The NTH027N65S3F_F155 features a low gate-source threshold voltage of 1.9V and a low on-state resistance of 0.026ohm.

The NTH027N65S3F_F155 operates by creating a channel between its source and drain terminals when the gate voltage applied is higher than its gate-source threshold voltage. The source and drain terminals are separated by an extremely thin layer of insulation, allowing electrons to flow from the source to the drain when a voltage is applied to the gate terminal. The resistance between the source and drain depends on the current flow and the amount of voltage applied to the gate.

The NTH027N65S3F_F155, due to its low on-state resistance and low gate threshold voltage, is highly suited for power conversion and high-frequency applications. The low on-state resistance allows for low power dissipation and high switching efficiency, while the low gate threshold voltage enables it to switch at a low voltage and current.

Conclusion

This article has discussed the application field and working principle of the NTH027N65S3F_F155, a 65V N-channel TrenchMOS FET transistor. This device is suited for a wide range of applications, including PFC, high-frequency power conversion and home appliance circuits. It features low on-state resistance and a low gate-source threshold voltage, making it well-suited for medium- and high-power applications.

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