NTHL040N65S3F Allicdata Electronics
Allicdata Part #:

NTHL040N65S3FOS-ND

Manufacturer Part#:

NTHL040N65S3F

Price: $ 9.90
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: SUPERFET3 650V TO247
More Detail: N-Channel 650V 65A (Tc) 446W (Tc) Through Hole TO-...
DataSheet: NTHL040N65S3F datasheetNTHL040N65S3F Datasheet/PDF
Quantity: 1000
1 +: $ 8.99640
10 +: $ 8.09802
450 +: $ 6.11871
Stock 1000Can Ship Immediately
$ 9.9
Specifications
Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 446W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5940pF @ 400V
Vgs (Max): ±30V
Series: SuperFET® III
Vgs(th) (Max) @ Id: 5V @ 6.5mA
Rds On (Max) @ Id, Vgs: 40 mOhm @ 32.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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The NTHL040N65S3F is a single n-channel enhancement mode Field Effect Transistor (FET). This small sized FET is mainly used in power management and industrial applications, such as low-side load switches, motordrivers, and general purpose switching circuits. It is an IGBT-type device and operates between 3-40V and has a maximum breakdown voltage of 65V.

This power device is built with a silicon gate, which provides the FET with a low on-resistance RDS(on). Usually, this type of power FET comes with an integral temperature sensing diode that helps with temperature management functions, like thermal shutdown and derating structures. This NTHL040N65S3F has an on-state continuous drain current rating of 5A, equivalent to an average 175°C junction temperature. Furthermore, this power FET has a direct gate-drive voltage of 10V, which makes it easy to control in gate driver circuits.

The main purpose of this FET is to act as a switch and control the passage of current. When it is used as a switch, it helps to control and manage power, thus reducing power consumption by managing power going to certain electrical components. In the "off" state, the NTHL040N65S3F prevents current from flowing through the circuit, completely disconnecting the circuit from the power source. When it is in the "on" state, the FET acts as a fast switch allowing current to flow in the circuit. Thus, by controlling the state of the FET, the current flowing in the circuit can be controlled and power consumption can be managed.

The NTHL040N65S3F has many applications in the industrial, automotive, and consumer electronics industries. It can be used in switching power supplies, low-side switches, motor drivers, solenoid drivers, and any other circuit that requires power control or isolation. It is also used as a load switch and can be used in circuits where protection against over-voltage or over-current is needed. Additionally, it has a range of applications in various digital and analog circuits.

The working principle of the NTHL040N65S3F is simple. It consists of a silicon gate that is connected to an electrical connector. When a voltage level is applied to the gate, it creates a switch effect in the FET and allows current to flow through it. The gate can be either positively or negatively charged, which will determine the state of the FET. When the voltage level is kept high, the FET is said to be "on" and current will flow, and when the voltage level is low, the FET is said to be "off" and current will not flow.

In conclusion, the NTHL040N65S3F is a single n-channel field effect transistor (FET) with a wide variety of applications and uses. It is used in power management and industrial applications and provides excellent power- and current-management capabilities for powering various digital and analog circuits. Its main function is to act as a switch and provide protection against over-voltage and current. Additionally, its working principle is based on creating a switch effect in the FET and controlling the flow of current by adjusting the gate voltage.

The specific data is subject to PDF, and the above content is for reference

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