NTHL065N65S3F Allicdata Electronics
Allicdata Part #:

NTHL065N65S3FOS-ND

Manufacturer Part#:

NTHL065N65S3F

Price: $ 6.27
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: SUPERFET3 650V TO247
More Detail: N-Channel 650V 46A (Tc) 337W (Tc) Through Hole TO-...
DataSheet: NTHL065N65S3F datasheetNTHL065N65S3F Datasheet/PDF
Quantity: 1000
1 +: $ 5.70150
10 +: $ 5.12883
450 +: $ 3.87527
900 +: $ 3.25978
Stock 1000Can Ship Immediately
$ 6.27
Specifications
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 337W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4075pF @ 400V
Vgs (Max): ±30V
Series: --
Vgs(th) (Max) @ Id: 5V @ 4.6mA
Rds On (Max) @ Id, Vgs: 65 mOhm @ 23A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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The NTHL065N65S3F is a type of MOSFET, a type of Field Effect Transistor (FET). It is a single transistor and is commonly used in a variety of different applications. The following is an overview of the applications and working principle of the NTHL065N65S3F.

Applications

The NTHL065N65S3F is most commonly used for power supply regulation chip, motor controller, and switching regulator applications. It is a breakthrough in the application of FETs, as it combines low on-resistance, low gate charge and low threshold voltage, which makes it suitable for a range of high-density applications. It is a great choice for cost-sensitive, high-reliability applications as well.

Another popular use of the NTHL065N65S3F is in power switching and management applications. Due to its low on-resistance and very low gate charge characteristics, this transistor is ideal for low power, high speed applications that require high switching speeds with minimal power loss. This can be found in power distribution, load switching and supply voltage control applications.

Moreover, the NTHL065N65S3F can also be used in output port circuits, like in portable electronic devices and storage drives. This transistor helps in reducing current leakage and provides optimum switching performance with improved stability.

Working Principle

The NTHL065N65S3F is a type of MOSFET, which stands for Metal-Oxide-Semiconductor Field Effect Transistor. The MOSFET is an unipolar transistor, which means that it is controlled by voltage. This is in contrast to the bipolar transistor, which is controlled by current. The MOSFET works on the principle of “Current flow by a reverse-biased gate oxide”.

In the NTHL065N65S3F, the channel width between the source and drain is modulated by the application of an electric field to the gate. When a positive voltage is applied to the gate, it creates an electric field that reduces the width of the channel and thus allowing less current to flow from the source to the drain. Conversely, when a negative voltage is applied to the gate, it increases the channel width, allowing more current to flow through the device.

The device also has a voltage threshold or “Gate Threshold Voltage”, which is the voltage necessary to turn the device on or off. This is usually between 4V and 8V, depending on the device. Once the threshold voltage is exceeded, the device will turn on, allowing current to flow between the source and drain.

The NTHL065N65S3F also has a “dynamic on-resistance”, which is the resistance from the source to the drain at a given voltage. The higher the voltage, the lower the dynamic on-resistance, allowing more current to flow through the device. This is useful for high power applications, such as motor controllers and power supplies.

Conclusion

The NTHL065N65S3F is a single MOSFET type of Field Effect Transistor. It has a variety of applications, such as power switching, power management and motor control. It also works on the principle of “Current flow by a reverse-biased gate oxide”, with a voltage threshold of 4V to 8V and a dynamic on-resistance dependent on the applied voltage. The NTHL065N65S3F is a great choice for cost-sensitive, high reliability applications.

The specific data is subject to PDF, and the above content is for reference

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