| Allicdata Part #: | NTMKB4895NT1G-ND |
| Manufacturer Part#: |
NTMKB4895NT1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 15A ICEPAK |
| More Detail: | N-Channel 30V 15A (Ta), 66A (Tc) 2.2W (Ta), 42W (T... |
| DataSheet: |  NTMKB4895NT1G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
| Package / Case: | 4-ICEPAK |
| Supplier Device Package: | 4-ICEPAK - B1 PAD (4.8x3.8) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.2W (Ta), 42W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1644pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 6 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Ta), 66A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The NTMKB4895NT1G is a type of field effect transistor (FET). FETs are electrical components that can be used to amplify and control electrical signals in a variety of ways. These components are widely used in a variety of applications across many industries. The NTMKB4895NT1G is a FET specifically designed to provide increased performance in a variety of applications, making it a popular choice for many engineers.
At the heart of the NTMKB4895NT1G is a single, high voltage metal oxide semiconductor field effect transistor (MOSFET). This MOSFET is used to control the flow of an electrical current through the device by applying a voltage to a gate terminal. When the voltage on the gate terminal is increased, the MOSFET increases current through the device. When the voltage is decreased, the MOSFET decreases the current going through it.
The NTMKB4895NT1G is rated for operation at a voltage up to 60 volts, making it suitable for many higher voltage applications. Additionally, it has a current rating of up to 800 mA, giving it the capability to handle sizable electrical signals. This makes it ideal for amplifying and controlling signals in applications like radio frequency (RF) systems and high-power control applications.
The NTMKB4895NT1G is available with a number of different package configurations, allowing it to be used in a variety of applications. It is available in both an SOT23 and a TO-252 package, both of which offer easy integration into a circuit. Additionally, it can be soldered directly onto a board, which allows it to be used in space-constrained applications.
The NTMKB4895NT1G is a versatile, high performance device that can be used in a variety of applications. Its high voltage and current ratings make it suitable for many higher voltage and high-power control circuits. Additionally, its various package configurations make it easy to integrate into many different application types. Therefore, this device can be a great choice for many engineers who are looking for a high performance MOSFET.
The specific data is subject to PDF, and the above content is for reference
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