| Allicdata Part #: | NTMKE4891NT1G-ND |
| Manufacturer Part#: |
NTMKE4891NT1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 25V 129A ICEPAK |
| More Detail: | N-Channel 25V 26.7A (Ta), 151A (Tc) 2.8W (Ta), 89W... |
| DataSheet: |  NTMKE4891NT1G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
| Package / Case: | 5-ICEPAK |
| Supplier Device Package: | 4-ICEPAK - E1 PAD (6.3x4.9) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.8W (Ta), 89W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4360pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2.6 mOhm @ 29A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 26.7A (Ta), 151A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The NTMKE4891NT1G is a field effect transistor (FET) designed specifically for logic level applications. It is a high-performance MOSFET optimized for low-voltage switching, making it ideal for use in systems with limited power supply voltages. The NTMKE4891NT1G is capable of switching high currents at very low breakdown voltages and has a wide operating temperature range, making it a versatile device for many applications.
The NTMKE4891NT1G is a single-channel, enhancement-mode, N-channel MOSFET (NMOS). This type of transistor is often used as a switch and is normally off when no external voltage is applied. When a certain voltage is applied to the gate terminal, an electric field is created that causes the FET to turn on, allowing current to flow from the source terminal to the drain terminal.
The NTMKE4891NT1G is designed for use in a variety of applications. It can be used in switch mode power supplies, buck converters, battery chargers, and high-speed logic level switching circuits. It is also suitable for use in high-temperature environments and can handle up to 150C operating temperatures. Due its low on-resistance, high-current capabilities, and small size, it can replace bulky, high voltage FETs such as MOSFETs.
The NTMKE4891NT1G has an operating gate to source voltage (VGS) of 2.5V maximum and a gate charge of 3.1nC. This allows the device to switch quickly and efficiently. It also has a very low on-state resistance, which makes it a good choice for high-current applications. It can handle up to 12A of continuous drain current and 60A of pulsed drain current.
The NTMKE4891NT1G is available with a small, surface mount package. Its small size makes it a good fit for many applications with limited space. It is also RoHS compliant, so it can be used in applications where environmental compliance is a concern.
Overall, the NTMKE4891NT1G is a high-performance and versatile MOSFET designed for use in logic level applications and high current applications. Its low breakdown voltage, low gate charge, small size, and RoHS compliance make it a great choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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