NTP13N10G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTP13N10G N-Channel Enhancement Mode MOSFET is an advanced technology field-effect transistor designed for high-performance power switching applications. This small package device allows the designer to create a very small heat sink area and provides a cost-effective solution compared to a P-Channel device. This device is ideal for use in applications such as power supplies, motor control, switched-mode power applications, high-position switching, and amplifier circuits.

The NTP13N10G is a single N-Channel Enhancement Mode MOSFET that utilizes advanced silicon technology to provide excellent RDS(on) performance and low gate charge. It employs an advanced vertical cell structure with a high-density cell layout and has a small chip size. The device is designed to provide high current handling capability and low on-state resistance. It also features high switching speed and low Gate Threshold Voltage for improved efficiency.

In terms of its application field, the NTP13N10G device is suitable for several applications. It can be used as a switching device in a wide variety of power supply and motor control circuit applications. It can also be used in high-position switching applications, amplifier circuits, inverter circuits, switching regulators, DC-DC converters, and Bluetooth headset amplifiers.

The NTP13N10G device operates according to the principle of an Enhancement Mode MOSFET. Enhancement Mode MOSFETs use a gate oxide formed between the gate and the source/drain sections to form the source/drain junctions. The gate oxide acts as insulator, and when a voltage is applied to the gate, carriers are induced in the oxide and a conductive channel forms. The size of the conductive channel is dependent upon the gate voltage, and by varying the gate voltage, the resistance of the device can be controlled.

The NTP13N10G also features a high breakdown voltage, which is beneficial for low-voltage applications. It offers very low on-state resistance, making it ideal for high current and controlled current switching applications. The device also has a low capacitance, which enables it to provide a low impedance during the switching operation, resulting in improved performance.

In short, the NTP13N10G device is an advanced single N-Channel Enhancement Mode MOSFET that is suitable for a wide range of power supply and motor control applications. Its features include high current handling capability, low on-state resistance, high breakdown voltage, low capacitance, and low gate threshold voltage. These features make it an ideal choice for applications such as power supplies, motor control, switched-mode power applications, high-position switching, and amplifier circuits.

The specific data is subject to PDF, and the above content is for reference