NTP18N06L

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The NTP18N06L is a N-channel enhancement-mode Field Effect Transistor (FET) which has been designed specifically for use in low power, low voltage applications. It is manufactured using a very-high-density, complementary metal-oxide semiconductor (CMOS) process, that yields power efficiency and superior performance than other FETs on the market. This transistor is perfect for applications that require very low power operation, such as batteries or power sources with lower voltage ranges. In addition, it is ideal for applications that need to maintain high switching speeds.

Features

• Low ”Q-on”
• Low ”Q-off”
• High speed switching
• Minimum 40V drain-source breakdown voltage
• Operating temperature from -55°C to +150°C
• Low input capacitance
• Low ON-state resistance

Application Field

The NTP18N06L is perfect for a variety of low power applications that require fast switching and low-voltage power sources. It is ideal for powering and protecting small, portable electronics from a low-voltage, battery-powered source. This transistor is also a perfect choice for low-voltage motor control, as it ensures precise speed and torque regulation when running small motor applications. Additionally, this transistor is great for micro-controllers and logic circuits that need to control low-voltage peripherals.

Working Principle

The NTP18N06L is an enhancement-mode field effect transistor (FET), which functions by using an electric field to control the resistance between the source and the drain terminals. This FET has an N-channel, which means that when the gate voltage is between the source and drain voltage, the FET is in the “ON” state and current flows freely between the source and drain terminals. When the gate voltage is below the source or drain voltage, the FET is in the “OFF” state and the flow of current is critically restricted. The higher the gate voltage, the greater the current flow.

The NTP18N06L has exceptionally low “Q-on”, which means that it turns “ON” quickly when a voltage is applied. The transistor’s “Q-off” is extremely low, resulting in the transistor turning “OFF” quickly as well, making it ideal for high-speed switching applications. This FET is also capable of handling high voltages, resulting in minimal breakdown. Its ultra-low input capacitance and low ON-state resistance make it perfect for applications that require quick power cycles.

Conclusion

The NTP18N06L is a versatile N-channel enhancement-mode Field Effect Transistor (FET). It is designed to handle extremely low power and low voltage applications. This transistor is perfect for powering and protecting small, portable electronics, as well as fine-tuning small motors for precise speed control. When it comes to high-speed switching applications, the NTP18N06L outperforms other FETs with its extremely low “Q-on” and “Q-off” levels. In addition, its low input capacitance and low ON-state resistance make it perfect for applications that require quick power cycles. The NTP18N06L is the ideal choice for applications that need to operate on low power, low voltage sources.

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