NTP27N06G Allicdata Electronics
Allicdata Part #:

NTP27N06GOS-ND

Manufacturer Part#:

NTP27N06G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 27A TO220AB
More Detail: N-Channel 60V 27A (Ta) 88.2W (Tc) Through Hole TO-...
DataSheet: NTP27N06G datasheetNTP27N06G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88.2W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 46 mOhm @ 13.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The NTP27N06G is a single n-channel enhancement mode power MOSFET that has been designed for high voltage applications. It is a type of transistor device and belongs to the family of FETs (Field Effect Transistors). Generally, FETs are used for switching and amplifying electronic signals.

An NTP27N06G offers excellent switching performance as it can be operated with high switching frequencies and low on-state resistance. It can also be used for its ability to provide insulation resistance and high dielectric strength between the drain and the source. This makes the NTP27N06G ideal for use in applications which require high-voltage switching with very low dynamic losses.

The NTP27N06G is composed of several pieces of metal oxide silicon (MOS) material which work together in order to operate the device. The device features a source, drain, and gate terminal. The source and drain terminals are responsible for carrying current in and out of the device and the gate terminal is responsible for controlling the amount of current flowing in and out. The device requires a voltage to be applied to the gate terminal in order for it to be operational. The gate terminal should be connected to a logic circuit in order for it to function correctly.

The NTP27N06G has several application areas including power switching and high voltage switching. As the device has low on-state resistance, it is well suited for applications which require high switch-on and switch-off frequencies. The device is able to reduce power losses, allowing for more efficient operation in power electronic circuits. The NTP27N06G can also be used as a part of a power amplifier or converter circuit, as it can provide excellent linearity and low distortion.

In terms of its working principle, when a voltage is applied to the gate terminal it creates an electric field between the gate and the source. This field attracts electrons in the MOS material, which changes the conductivity of the device and allows current to flow through it. When the voltage is removed, the electric field will disappear and the device will return to its non-conductive state.

The NTP27N06G has been specifically designed to withstand high voltage and high current applications. It has a low on-state resistance which makes it ideal for high-frequency switching applications. It is also capable of providing isolated voltage and high insulation resistance, making it suitable for power converter circuits. The device is cost-effective and has low power losses, allowing for efficient operation.

The specific data is subject to PDF, and the above content is for reference

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