
Allicdata Part #: | NTP2955-ND |
Manufacturer Part#: |
NTP2955 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 2.4A TO220AB |
More Detail: | P-Channel 60V 2.4A (Ta) 2.4W (Ta), 62.5W (Tc) Thro... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta), 62.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 196 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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N-Channel TrenchMOS Transistor NTP2955 is a powerJFET designed and manufactured by ON Semiconductor. It is designed specifically for use in non-isolating DC-DC power converters, switching power supplies, and other linear applications requiring fast switching speed and low On-resistance.
The device is manufactured using a special nanopower silicon gate process designed to provide superior electrical and thermal characteristics. NTP2955 is rated at a maximum peak current of 40A and can work reliably at temperatures up to 175C. The device can operate at 2, 5 and 10V VDS ratings.
NTP2955 has typical applications in switching power supplies, DC-DC converters and other linear applications. It is used to regulate the current flow on the output stage of the device, and allow for fast switching speeds and low On-resistance. NTP2955 is particularly suitable for applications requiring good thermal performance, low on-state resistance and high-speed switching.
The working principle of NTP2955 is based on the electrical propagation of signals across the channel. The channel is a highly conducting section of material that allows electrons to flow in and out of the device. When the gate of the device is charged with a voltage, electrons are attracted to the gate, which causes the voltage across the channel to rise and eventually turn the device On. When the voltage is removed from the gate, the electrons are repelled and the device changes to the Off state.
The device is typically constructed using a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). This type of field effect transistor relies on the second layer of the structure, the Oxide layer, to act as an insulator between the conducting material and the gate, which controls the flow of electrons. The thickness of this layer, as well as its electrical properties, determine the device’s switching speed and On-resistance.
Overall, NTP2955 is an ideal device for most applications requiring a low On-resistance and fast switching speeds. The device is also highly reliable, efficient and cost-effective. It is an important component in numerous applications and is widely used in power-related applications for its superior electrical and thermal characteristics.
The specific data is subject to PDF, and the above content is for reference
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