NTP8G202NG Allicdata Electronics
Allicdata Part #:

NTP8G202NGOS-ND

Manufacturer Part#:

NTP8G202NG

Price: $ 14.74
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 9A TO220
More Detail: N-Channel 600V 9A (Tc) 65W (Tc) Through Hole TO-22...
DataSheet: NTP8G202NG datasheetNTP8G202NG Datasheet/PDF
Quantity: 1000
50 +: $ 13.40160
Stock 1000Can Ship Immediately
$ 14.74
Specifications
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 65W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V
Vgs (Max): ±18V
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V
Drive Voltage (Max Rds On, Min Rds On): 8V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tube 
Description

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The NTP8G202NG is a type of single, ultra-compact, low-voltage enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is manufactured by NDS, a company specializing in the production of reliable and high-quality analogue components. The NTP8G202NG MOSFET offers a range of features which provide users with a high level of performance and compatibility.

The NTP8G202NG is a single-input and single-output discrete MOSFET, meaning it offers a degree of relative simplicity for engineers and technicians who wish to use it in their designs. The NTP8G202NG has a low ON-state resistance of 0.88Ω and an OFF-state leakage current of 0.00028A. It also boasts a drain-source voltage of 800V and a current rating of 0.1A. As such, the NTP8G202NG is suitable for applications which require low power consumption and low leakage current. This makes the NTP8G202NG well-suited for a range of different uses, such as computers, mobile phones, and other consumer electronics.

The NTP8G202NG works using the field effect principle. This principle requires that an electric field be generated by a voltage source in order to control the current flow through the device. The device consists of a gate, drain, and source terminal. The gate control terminal is connected to the voltage source, and the current flow to the drain and source terminals is controlled by applying a voltage. When the voltage is increased, the electric field is increased and electrons are pushed across the gate oxide, providing a higher current conduction through the transistor.

The NTP8G202NG is suitable for a variety of applications, including switching circuits, portable devices, battery-powered applications, LED lighting, and audio amplifiers. In switching circuits, the NTP8G202NG is used to control the flow of current, providing greater efficiency and better noise performance. In portable devices, the low ON-state resistance of the NTP8G202NG ensures low power consumption. It can also be used in audio amplifiers, as its low leakage current helps to reduce distortion and noise. Finally, the NTP8G202NG can be used in LED lighting to control the current, providing a longer-lasting, more efficient lighting solution.

In summary, the NTP8G202NG is a single, low-voltage, low-power MOSFET which utilizes the field effect principle. It is well-suited for applications which require low power consumption and low leakage current. It can be used in a variety of applications, including switching circuits, portable devices, battery-powered applications, LED lighting, and audio amplifiers. Its low ON-state resistance, current rating, and drain source voltage make the NTP8G202NG an excellent choice for a range of applications.

The specific data is subject to PDF, and the above content is for reference

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