NTP8G206NG Allicdata Electronics
Allicdata Part #:

NTP8G206NGOS-ND

Manufacturer Part#:

NTP8G206NG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 17A TO220
More Detail: N-Channel 600V 17A (Tc) 96W (Tc) Through Hole TO-2...
DataSheet: NTP8G206NG datasheetNTP8G206NG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 96W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
Vgs (Max): ±18V
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V
Drive Voltage (Max Rds On, Min Rds On): 8V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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NTP8G206NG application field and working principle

NTP8G206NG is a P-Channel Enhancement Mode MOSFET which can be used in both digital and analog circuits. It provides a low-cost, efficient, and low power solution when used in applications where it needs to switch high current. With its low gate-to-source threshold is highly suitable for logic control applications. It has a rugged, durable design and low on-state and off-state resistance.

Application Fields

NTP8G206NG can be used in many applications like supplying voltage to large load circuits such as motors and pumps and for general purpose switching in different circuits. It also comes with many operating temperature range and can be used for temperature compensation. It is widely used in industrial control application and mobile phone base station. It can also be used in automotive and other high reliability applications.

Features

  • Low on-state resistance.
  • Low gate-to-source threshold.
  • High immunity to temperature changes.
  • High reliability.
  • Low reverse transfer capacitance.

Working principle

NTP8G206NG is a P-Channel Enhancement mode MOSFET. It has a reverse capacitor connected to the gate of the MOSFET and the source of the MOSFET. The operation of the device is based on the capacitive coupling between the two connections. When the voltage is applied to the gate, it causes a charge buildup at the gate which induces a current on the source. This current weakens the connection between the drain and the source, thus switching off the device.

Once the voltage is removed from the gate, the reverse capacitor causes a reverse current which neutralizes the charge buildup, thus turning off the device. This device also has a built-in protection against overvoltages, when the voltage increases above a certain threshold, the MOSFET will switch off. This protects the circuit from any overvoltage situation.

Conclusion

NTP8G206NG is a P-Channel Enhancement Mode MOSFET which provides a reliable and efficient solution for applications like supplying voltage to large load circuits and for general purpose switching. It has a rugged, durable design and low gate-to-source threshold suitable for logic control. It offers high immunity to temperature changes and low reverse transfer capacitance. Its inherent protection against overvoltages provides a safe way of protecting the circuit from any possible overvoltage situation.

The specific data is subject to PDF, and the above content is for reference

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